932456-1: TRANSISTOR.
The TRANSISTOR is a the manufacturer industrial component. Key specifications include overall_length: 0.180 INCHES MAXIMUM IN, mounting_method: TERMINAL, terminal_length: 0.500 INCHES MINIMUM IN, overall_diameter: 0.370 INCHES MAXIMUM IN, internal_configuration: FIELD EFFECT, semiconductor_material: SILICON. This part is cataloged in the U.S.
Government catalog under NSN 5961-01-155-2936, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.
Verify compatibility with your specific system configuration before ordering.
| overall_length | 0.180 INCHES MAXIMUM IN |
| mounting_method | TERMINAL |
| terminal_length | 0.500 INCHES MINIMUM IN |
| overall_diameter | 0.370 INCHES MAXIMUM IN |
| internal_configuration | FIELD EFFECT |
| semiconductor_material | SILICON |
| terminal_circle_diameter | 0.200 INCHES NOMINAL IN |
| terminal_type_and_quantity | 3 UNINSULATED WIRE LEAD |
| specification/standard_data | 81349-MIL-PRF-19500/557 GOVERNMENT SPECIFICATION |
| power_rating_per_characteristic | 25.0 WATTS MAXIMUM TOTAL POWER DISSIPATION |
| current_rating_per_characteristic | 8.00 AMPERES MAXIMUM SOURCE CURRENT AND 32.00 AMPERES MAXIMUM OFF-STATE CURRENT, PEAK |
| voltage_rating_in_volts_per_characteristic | 100.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 100.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 20.0 MAXIMUM GATE TO SOURCE VOLTAGE |
| NSN | 5961-01-155-2936 |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 75.0 MINIMUM BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE AND 20.0 MINIMUM BREAKDOWN VOLTAGE, GATE-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 150.0 CELSIUS CASE DEGC |
| JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | TO-39 |
| OVERALL DIAMETER | 0.350 INCHES MINIMUM AND 0.370 INCHES MAXIMUM IN |
| TERMINAL LENGTH | 0.500 INCHES MINIMUM IN |
| MOUNTING METHOD | TERMINAL |
| SEMICONDUCTOR MATERIAL | SILICON |
| OVERALL LENGTH | 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM IN |
| INTERNAL CONFIGURATION | FIELD EFFECT |
| CURRENT RATING PER CHARACTERISTIC | 8.00 AMPERES MAXIMUM DRAIN CURRENT |