91680811 — TRANSISTOR

✓ Government record, cited

— · SFP TRANSCEIVER

PRODUCT OVERVIEW

91680811: TRANSISTOR.

The TRANSISTOR is a the manufacturer industrial component. Key specifications include material: PLASTIC ENCLOSURE, overall_height: 0.033 INCHES MAXIMUM IN, overall_length: 0.110 INCHES MINIMUM AND 0.122 INCHES MAXIMUM IN, mounting_method: TERMINAL, internal_configuration: FIELD EFFECT, semiconductor_material: SILICON. This part is cataloged in the U.S.

Government catalog under NSN 5961-01-414-8640, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS

91680811

NSN: 5961-01-414-8640
FSC: 5961 — Semiconductor Devices and Associated Hardware
CAGE: F6481 — THALES SA (FRA)

SPECIFICATIONS

material	PLASTIC ENCLOSURE
overall_height	0.033 INCHES MAXIMUM IN
overall_length	0.110 INCHES MINIMUM AND 0.122 INCHES MAXIMUM IN
mounting_method	TERMINAL
internal_configuration	FIELD EFFECT
semiconductor_material	SILICON
power_rating_per_characteristic	350.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
current_rating_per_characteristic	50.00 MILLIAMPERES MAXIMUM DRAIN CURRENT
voltage_rating_in_volts_per_characteristic	30.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 20.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 25.0 MAXIMUM GATE TO SOURCE VOLTAGE
maximum_operating_temp_per_measurement_point	125.0 CELSIUS JUNCTION DEGC
joint_electronic_device_engineering_council/jedec/case_outline_designation	SOT-143
NSN	5961-01-414-8640

COMPONENT DIAGRAM

KEY FEATURES

•

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 20.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 25.0 MAXIMUM GATE TO SOURCE VOLTAGE

•

MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 CELSIUS JUNCTION DEGC

•

JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: SOT-143

•

MOUNTING METHOD: TERMINAL

•

SEMICONDUCTOR MATERIAL: SILICON

•

INTERNAL CONFIGURATION: FIELD EFFECT

TECHNICAL CHARACTERISTICS

OVERALL HEIGHT	0.033 INCHES MAXIMUM IN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC	30.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 20.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 25.0 MAXIMUM GATE TO SOURCE VOLTAGE
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT	125.0 CELSIUS JUNCTION DEGC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION	SOT-143
MOUNTING METHOD	TERMINAL
SEMICONDUCTOR MATERIAL	SILICON
OVERALL LENGTH	0.110 INCHES MINIMUM AND 0.122 INCHES MAXIMUM IN
INTERNAL CONFIGURATION	FIELD EFFECT
CURRENT RATING PER CHARACTERISTIC	50.00 MILLIAMPERES MAXIMUM DRAIN CURRENT
MATERIAL	PLASTIC ENCLOSURE

SUBSTITUTES & CROSS-REFERENCES 1

SST215Reference document

Same NSN cross-reference

Reference document — Secondary reference

LIFECYCLE

NSN statusActive· U.S. Government catalog

Acquisition advice: Terminal item — stock exhausted; no further procurementNo demilitarization required

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FREQUENTLY ASKED QUESTIONS

What is 91680811?

91680811 is a TRANSISTOR.

What parts can replace 91680811?

There is 1 known substitute for 91680811: SST215. Substitute compatibility should be verified for your specific system.

What is the NSN for 91680811?

91680811 is cataloged in the U.S. Government catalog under NSN 5961-01-414-8640. This indicates validated use in U.S. government and defense supply chains.

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91680811 — TRANSISTOR

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