900AS2000 — SEMICONDUCTOR DEVICES,UNITIZED

✓ Government record, cited

— · SFP TRANSCEIVER

PRODUCT OVERVIEW

900AS2000: SEMICONDUCTOR DEVICES,UNITIZED.

The SEMICONDUCTOR DEVICES,UNITIZED is a the manufacturer industrial component. Key specifications include material: CERAMIC ENCLOSURE, overall_width: 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM IN, overall_height: 0.200 INCHES MAXIMUM IN, overall_length: 0.660 INCHES MINIMUM AND 0.785 INCHES MAXIMUM IN, mounting_method: TERMINAL, terminal_length: 0.300 INCHES MINIMUM IN. This part is cataloged in the U.S.

Government catalog under NSN 5961-01-334-8648, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS

900AS2000

NSN: 5961-01-334-8648
FSC: 5961 — Semiconductor Devices and Associated Hardware
CAGE: 30003 — NAVAL AIR SYSTEMS COMMAND MANAGED ORIGINAL DESIGN ACTIVITY NOT MATERIAL/PARTS SUPPLIER (USA)

SPECIFICATIONS

material	CERAMIC ENCLOSURE
overall_width	0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM IN
overall_height	0.200 INCHES MAXIMUM IN
overall_length	0.660 INCHES MINIMUM AND 0.785 INCHES MAXIMUM IN
mounting_method	TERMINAL
terminal_length	0.300 INCHES MINIMUM IN
special_features	ALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: NPN
features_provided	ELECTROSTATIC SENSITIVE
semiconductor_material	SILICON ALL TRANSISTOR
component_name_and_quantity	4 TRANSISTOR
power_rating_per_characteristic	1.9 WATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL TRANSISTOR
current_rating_per_characteristic	300.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC ALL TRANSISTOR
NSN	5961-01-334-8648

COMPONENT DIAGRAM

KEY FEATURES

•

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 60.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN ALL TRANSISTOR

•

MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 CELSIUS JUNCTION DEGC

•

TERMINAL LENGTH: 0.300 INCHES MINIMUM IN

•

MOUNTING METHOD: TERMINAL

•

SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR

•

COMPONENT NAME AND QUANTITY: 4 TRANSISTOR

TECHNICAL CHARACTERISTICS

OVERALL HEIGHT	0.200 INCHES MAXIMUM IN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC	30.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 60.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN ALL TRANSISTOR
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT	200.0 CELSIUS JUNCTION DEGC
TERMINAL LENGTH	0.300 INCHES MINIMUM IN
MOUNTING METHOD	TERMINAL
SEMICONDUCTOR MATERIAL	SILICON ALL TRANSISTOR
OVERALL LENGTH	0.660 INCHES MINIMUM AND 0.785 INCHES MAXIMUM IN
COMPONENT NAME AND QUANTITY	4 TRANSISTOR
OVERALL WIDTH	0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM IN
FEATURES PROVIDED	ELECTROSTATIC SENSITIVE

SUBSTITUTES & CROSS-REFERENCES 3

MHQ6002HXSame NSN cross-reference

Same NSN cross-reference

Also cataloged under this NSN

MHQ6002Reference document

Same NSN cross-reference

Reference document — Replaced / superseded reference

MHQ6002HXVReference document

Same NSN cross-reference

Reference document — Secondary reference

LIFECYCLE

NSN statusCancelled· U.S. Government catalog

Acquisition advice: Insurance item — stocked against contingency demandNo demilitarization required

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FREQUENTLY ASKED QUESTIONS

What is 900AS2000?

900AS2000 is a SEMICONDUCTOR DEVICES,UNITIZED.

What parts can replace 900AS2000?

There are 3 known substitutes for 900AS2000: MHQ6002HX, MHQ6002, MHQ6002HXV. Substitute compatibility should be verified for your specific system.

What is the NSN for 900AS2000?

900AS2000 is cataloged in the U.S. Government catalog under NSN 5961-01-334-8648. This indicates validated use in U.S. government and defense supply chains.

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