90001A1118: LIGHT EMITTING DIODE.
The LIGHT EMITTING DIODE is a the manufacturer industrial component. Key specifications include overall_length: 0.121 INCHES MINIMUM AND 0.131 INCHES MAXIMUM IN, mounting_method: TERMINAL, terminal_length: 0.500 INCHES MINIMUM IN, overall_diameter: 0.208 INCHES MINIMUM AND 0.220 INCHES MAXIMUM IN, semiconductor_material: GALLIUM ARSENIDE, terminal_type_and_quantity: 3 UNINSULATED WIRE LEAD. This part is cataloged in the U.S.
Government catalog under NSN 5980-01-408-7664, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.
Verify compatibility with your specific system configuration before ordering.
| overall_length | 0.121 INCHES MINIMUM AND 0.131 INCHES MAXIMUM IN |
| mounting_method | TERMINAL |
| terminal_length | 0.500 INCHES MINIMUM IN |
| overall_diameter | 0.208 INCHES MINIMUM AND 0.220 INCHES MAXIMUM IN |
| semiconductor_material | GALLIUM ARSENIDE |
| terminal_type_and_quantity | 3 UNINSULATED WIRE LEAD |
| color_tone_produced_per_source | INFRARED SEMICONDUCTOR |
| current_rating_per_characteristic | 100.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC |
| voltage_rating_in_volts_per_characteristic | 1.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS |
| maximum_operating_temp_per_measurement_point | 125.0 CELSIUS AMBIENT AIR DEGC |
| NSN | 5980-01-408-7664 |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 1.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 125.0 CELSIUS AMBIENT AIR DEGC |
| OVERALL DIAMETER | 0.208 INCHES MINIMUM AND 0.220 INCHES MAXIMUM IN |
| TERMINAL LENGTH | 0.500 INCHES MINIMUM IN |
| MOUNTING METHOD | TERMINAL |
| SEMICONDUCTOR MATERIAL | GALLIUM ARSENIDE |
| OVERALL LENGTH | 0.121 INCHES MINIMUM AND 0.131 INCHES MAXIMUM IN |
| CURRENT RATING PER CHARACTERISTIC | 100.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC |
| TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
| COLOR TONE PRODUCED PER SOURCE | INFRARED SEMICONDUCTOR |