<b>What is 3D V-NAND and how does it differ from existing technology?</b><br>Samsung’s unique and innovative 3D V-NAND flash memory architecture is a breakthrough in overcoming the density limitations, performance and endurance of today’s conventional planar NAND architecture. 3D V-NAND is fabricated by stacking 32 cell layers vertically over one another rather than decreasing the cells dimensions and trying to fit itself onto a fixed horizontal space resulting in higher density and better performance utilising a smaller footprint.<br><br><b>Optimise daily computing with TurboWrite technology for unrivalled read/write speeds.</b><br>Achieve the ultimate read/write performance to maximise your everyday computing experience with Samsung’s TurboWrite technology. You not only obtain more than a 10% better user experience than 840 EVO* but up to 1.9x faster random write speeds for 120/250 GB models** as well.
The 850EVO delivers the top of its class performance in sequential read (540 MB/s)
| Depth | 100 mm |
| Width | 69.8 mm |
| Height | 6.8 mm |
| Internal | Yes |
| Interface | Serial ATA III |
| Read speed | 540 MB/s |
| Memory type | MLC |
| Write speed | 520 MB/s |
| SSD capacity | 120 GB |
| TRIM support | Yes |
| Product colour | Black |
| Operating shock | 1500 G |
No verified substitutes available.