87AA108S — TRANSISTOR

✓ Government record, cited

— · SFP TRANSCEIVER

PRODUCT OVERVIEW

87AA108S: TRANSISTOR.

The TRANSISTOR is a the manufacturer industrial component. Key specifications include overall_length: 1.218 INCHES MAXIMUM IN, mounting_method: THREADED STUD(S), overall_diameter: 0.380 INCHES MAXIMUM IN, special_features: JUNCTION PATTERN ARRANGEMENT: NPN, nominal_thread_size: 0.190 INCHES IN, internal_configuration: JUNCTION CONTACT-DARLINGTON CONNECTED. This part is cataloged in the U.S.

Government catalog under NSN 5961-00-528-9858, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS

87AA108S

NSN: 5961-00-528-9858
FSC: 5961 — Semiconductor Devices and Associated Hardware
CAGE: 21845 — SOLITRON DEVICES, INC. (USA)

SPECIFICATIONS

overall_length	1.218 INCHES MAXIMUM IN
mounting_method	THREADED STUD(S)
overall_diameter	0.380 INCHES MAXIMUM IN
special_features	JUNCTION PATTERN ARRANGEMENT: NPN
nominal_thread_size	0.190 INCHES IN
internal_configuration	JUNCTION CONTACT-DARLINGTON CONNECTED
semiconductor_material	SILICON
thread_series_designator	UNF
mounting_facility_quantity	1
overall_width_across_flats	0.437 INCHES MAXIMUM IN
terminal_type_and_quantity	4 TAB, SOLDER LUG
power_rating_per_characteristic	12.5 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
NSN	5961-00-528-9858

COMPONENT DIAGRAM

KEY FEATURES

•

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 40.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 15.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN

•

MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 CELSIUS AMBIENT AIR DEGC

•

MOUNTING FACILITY QUANTITY: 1

•

JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-111

•

OVERALL DIAMETER: 0.380 INCHES MAXIMUM IN

•

MOUNTING METHOD: THREADED STUD(S)

•

SEMICONDUCTOR MATERIAL: SILICON

TECHNICAL CHARACTERISTICS

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC	60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 40.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 15.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT	175.0 CELSIUS AMBIENT AIR DEGC
MOUNTING FACILITY QUANTITY	1
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION	TO-111
OVERALL DIAMETER	0.380 INCHES MAXIMUM IN
MOUNTING METHOD	THREADED STUD(S)
SEMICONDUCTOR MATERIAL	SILICON
OVERALL LENGTH	1.218 INCHES MAXIMUM IN
INTERNAL CONFIGURATION	JUNCTION CONTACT-DARLINGTON CONNECTED
OVERALL WIDTH ACROSS FLATS	0.437 INCHES MAXIMUM IN

SUBSTITUTES & CROSS-REFERENCES

No substitute or cross-reference records for this part.

LIFECYCLE

NSN statusActive· U.S. Government catalog

Acquisition advice: Terminal item — stock exhausted; no further procurementNo demilitarization required

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FREQUENTLY ASKED QUESTIONS

What is 87AA108S?

87AA108S is a TRANSISTOR.

What is the NSN for 87AA108S?

87AA108S is cataloged in the U.S. Government catalog under NSN 5961-00-528-9858. This indicates validated use in U.S. government and defense supply chains.

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87AA108S — TRANSISTOR

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