82T369M001 — TRANSISTOR

✓ Government record, cited

— · SFP TRANSCEIVER

PRODUCT OVERVIEW

82T369M001: TRANSISTOR.

The TRANSISTOR is a the manufacturer industrial component. Key specifications include overall_width: 0.620 INCHES MAXIMUM IN, overall_height: 0.340 INCHES MAXIMUM IN, overall_length: 0.340 INCHES MAXIMUM IN, mounting_method: UNTHREADED HOLE(S), special_features: JUNCTION PATTERN ARRANGEMENT: NPN, features_provided: HERMETICALLY SEALED CASE. This part is cataloged in the U.S.

Government catalog under NSN 5961-00-370-2654, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS

82T369M001

NSN: 5961-00-370-2654
FSC: 5961 — Semiconductor Devices and Associated Hardware
CAGE: A1615 — LEONARDO S.P.A LAND & NAVAL DEFENCE ELECTRONICS DIVISION (ITA)

SPECIFICATIONS

overall_width	0.620 INCHES MAXIMUM IN
overall_height	0.340 INCHES MAXIMUM IN
overall_length	0.340 INCHES MAXIMUM IN
mounting_method	UNTHREADED HOLE(S)
special_features	JUNCTION PATTERN ARRANGEMENT: NPN
features_provided	HERMETICALLY SEALED CASE
internal_configuration	JUNCTION CONTACT
semiconductor_material	SILICON
mounting_facility_quantity	2
terminal_type_and_quantity	2 PIN
power_rating_per_characteristic	50.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
current_rating_per_characteristic	10.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
NSN	5961-00-370-2654

COMPONENT DIAGRAM

KEY FEATURES

•

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 250.0 NOMINAL BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN

•

MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 CELSIUS JUNCTION DEGC

•

MOUNTING FACILITY QUANTITY: 2

•

MOUNTING METHOD: UNTHREADED HOLE(S)

•

SEMICONDUCTOR MATERIAL: SILICON

•

INTERNAL CONFIGURATION: JUNCTION CONTACT

TECHNICAL CHARACTERISTICS

OVERALL HEIGHT	0.340 INCHES MAXIMUM IN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC	250.0 NOMINAL BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT	200.0 CELSIUS JUNCTION DEGC
MOUNTING FACILITY QUANTITY	2
MOUNTING METHOD	UNTHREADED HOLE(S)
SEMICONDUCTOR MATERIAL	SILICON
OVERALL LENGTH	0.340 INCHES MAXIMUM IN
INTERNAL CONFIGURATION	JUNCTION CONTACT
OVERALL WIDTH	0.620 INCHES MAXIMUM IN
FEATURES PROVIDED	HERMETICALLY SEALED CASE

SUBSTITUTES & CROSS-REFERENCES 3

167-0029-120Same NSN cross-reference

Same NSN cross-reference

Also cataloged under this NSN

2N6233Reference document

Same NSN cross-reference

Reference document — Advisory reference — outside the item-of-supply concept

1814-2001Reference document

Same NSN cross-reference

Reference document — Design control — primary reference

LIFECYCLE

NSN statusActive· U.S. Government catalog

Acquisition advice: Normally procured from the manufacturer (OEM)No demilitarization required

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FREQUENTLY ASKED QUESTIONS

What is 82T369M001?

82T369M001 is a TRANSISTOR.

What parts can replace 82T369M001?

There are 3 known substitutes for 82T369M001: 167-0029-120, 2N6233, 1814-2001. Substitute compatibility should be verified for your specific system.

What is the NSN for 82T369M001?

82T369M001 is cataloged in the U.S. Government catalog under NSN 5961-00-370-2654. This indicates validated use in U.S. government and defense supply chains.

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82T369M001 — TRANSISTOR

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