82008B3KA — MICROCIRCUIT,MEMORY

✓ Government record, cited

— · COMPONENT

PRODUCT OVERVIEW

82008B3KA: MICROCIRCUIT,MEMORY.

The MICROCIRCUIT,MEMORY is a the manufacturer memory module engineered for enterprise server and workstation platforms requiring validated, high-reliability memory. Key specifications include special_features: ELECTROSTATIC DISCHARGE SENSITIVE, features_provided: PROGRAMMABLE AND ELECTROSTATIC SENSITIVE AND MONOLITHIC AND BIPOLAR AND HIGH RELIABILITY, output_logic_form: TRANSISTOR-TRANSISTOR LOGIC, memory_device_type: PROM, storage_temp_range: -65.0 TO 150.0 CELSIUS DEGC, operating_temp_range: -55.0 TO 125.0 CELSIUS DEGC. This part is cataloged in the U.S.

Government catalog under NSN 5962-01-289-2974, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS

82008B3KA

NSN: 5962-01-289-2974
FSC: 5962 — Microcircuits, Electronic
CAGE: 16236 — DLA LAND AND MARITIME DBA ENGINEERING AND TECHNICAL SUPPORT DIV DOCUMENT STANDARDIZATION DIVISION (VENDOR ITEM DRAWINGS) (USA)

SPECIFICATIONS

special_features	ELECTROSTATIC DISCHARGE SENSITIVE
features_provided	PROGRAMMABLE AND ELECTROSTATIC SENSITIVE AND MONOLITHIC AND BIPOLAR AND HIGH RELIABILITY
output_logic_form	TRANSISTOR-TRANSISTOR LOGIC
memory_device_type	PROM
storage_temp_range	-65.0 TO 150.0 CELSIUS DEGC
operating_temp_range	-55.0 TO 125.0 CELSIUS DEGC
hybrid_technology_type	MONOLITHIC
inclosure_configuration	FLAT PACK
terminal_type_and_quantity	24 PIN
criticality_code_justification	FEAT
case_outline_source_and_designator	F-6 MIL-M-38510
NSN	5962-01-289-2974

COMPONENT DIAGRAM

KEY FEATURES

•

HYBRID TECHNOLOGY TYPE: MONOLITHIC

•

CRITICALITY CODE JUSTIFICATION: FEAT

•

FEATURES PROVIDED: PROGRAMMABLE AND ELECTROSTATIC SENSITIVE AND MONOLITHIC AND BIPOLAR AND HIGH RELIABILITY

•

INCLOSURE CONFIGURATION: FLAT PACK

•

MEMORY DEVICE TYPE: PROM

•

CASE OUTLINE SOURCE AND DESIGNATOR: F-6 MIL-M-38510

•

STORAGE TEMP RANGE: -65.0 TO 150.0 CELSIUS DEGC

•

OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC

TYPICAL APPLICATIONS

Server memory expansion for virtualization workloads
Database performance optimization (in-memory computing)
VDI and remote desktop session hosting
High-performance computing (HPC) clusters
Mail server and collaboration platform scaling
Application server tier expansion

TECHNICAL CHARACTERISTICS

HYBRID TECHNOLOGY TYPE	MONOLITHIC
CRITICALITY CODE JUSTIFICATION	FEAT
FEATURES PROVIDED	PROGRAMMABLE AND ELECTROSTATIC SENSITIVE AND MONOLITHIC AND BIPOLAR AND HIGH RELIABILITY
INCLOSURE CONFIGURATION	FLAT PACK
MEMORY DEVICE TYPE	PROM
CASE OUTLINE SOURCE AND DESIGNATOR	F-6 MIL-M-38510
STORAGE TEMP RANGE	-65.0 TO 150.0 CELSIUS DEGC
OUTPUT LOGIC FORM	TRANSISTOR-TRANSISTOR LOGIC
SPECIAL FEATURES	ELECTROSTATIC DISCHARGE SENSITIVE
OPERATING TEMP RANGE	-55.0 TO 125.0 CELSIUS DEGC

SUBSTITUTES & CROSS-REFERENCES 3

8200803KASame NSN cross-reference

Same NSN cross-reference

Also cataloged under this NSN

ROM/PROMReference document

Same NSN cross-reference

Reference document — Secondary reference

7570984-100Reference document

Same NSN cross-reference

Reference document — Design control — primary reference

LIFECYCLE

NSN statusActive· U.S. Government catalog

Acquisition advice: Terminal item — no further procurement; issued until stock is exhaustedNo demilitarization required

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FREQUENTLY ASKED QUESTIONS

What is 82008B3KA?

82008B3KA is a MICROCIRCUIT,MEMORY.

What parts can replace 82008B3KA?

There are 3 known substitutes for 82008B3KA: 8200803KA, ROM/PROM, 7570984-100. Substitute compatibility should be verified for your specific system.

What is the NSN for 82008B3KA?

82008B3KA is cataloged in the U.S. Government catalog under NSN 5962-01-289-2974. This indicates validated use in U.S. government and defense supply chains.

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