8157100-1: TRANSISTOR.
The TRANSISTOR is a the manufacturer industrial component. Key specifications include material: CERAMIC ENCLOSURE, overall_width: 0.725 INCHES NOMINAL IN, overall_height: 0.280 INCHES MAXIMUM IN, overall_length: 0.850 INCHES NOMINAL IN, mounting_method: UNTHREADED HOLE(S), semiconductor_material: SILICON. This part is cataloged in the U.S.
Government catalog under NSN 5961-01-124-1893, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.
Verify compatibility with your specific system configuration before ordering.
| material | CERAMIC ENCLOSURE |
| overall_width | 0.725 INCHES NOMINAL IN |
| overall_height | 0.280 INCHES MAXIMUM IN |
| overall_length | 0.850 INCHES NOMINAL IN |
| mounting_method | UNTHREADED HOLE(S) |
| semiconductor_material | SILICON |
| mounting_facility_quantity | 2 |
| terminal_type_and_quantity | 6 RIBBON |
| power_rating_per_characteristic | 146.0 WATTS MAXIMUM TOTAL POWER DISSIPATION |
| current_rating_per_characteristic | 50.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC |
| maximum_operating_temp_per_measurement_point | 200.0 CELSIUS AMBIENT AIR DEGC |
| NSN | 5961-01-124-1893 |
| OVERALL HEIGHT | 0.280 INCHES MAXIMUM IN |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 60.0 MINIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, WITH BASE SHORT-CIRCUITED TO EMITTER AND 33.0 MINIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 4.0 MINIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 CELSIUS AMBIENT AIR DEGC |
| MOUNTING FACILITY QUANTITY | 2 |
| MOUNTING METHOD | UNTHREADED HOLE(S) |
| SEMICONDUCTOR MATERIAL | SILICON |
| OVERALL LENGTH | 0.850 INCHES NOMINAL IN |
| OVERALL WIDTH | 0.725 INCHES NOMINAL IN |
| CURRENT RATING PER CHARACTERISTIC | 50.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC |
| MATERIAL | CERAMIC ENCLOSURE |