The SEMICONDUCTOR DEVICES,UNITIZED is a the manufacturer industrial component. Key specifications include overall_width: 1.050 INCHES MAXIMUM IN, overall_height: 0.450 INCHES MAXIMUM IN, overall_length: 1.573 INCHES MAXIMUM IN, mounting_method: UNTHREADED HOLE(S), features_provided: HERMETICALLY SEALED CASE AND ELECTROSTATIC SENSITIVE, semiconductor_material: SILICON ALL SEMICONDUCTOR DEVICE DIODE. This product is currently in active production with full OEM support.
This part is cataloged in the Federal Logistics Information System (FLIS) under NSN 5961-01-271-5340, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.
Verify compatibility with your specific system configuration before ordering.
| overall_width | 1.050 INCHES MAXIMUM IN |
| overall_height | 0.450 INCHES MAXIMUM IN |
| overall_length | 1.573 INCHES MAXIMUM IN |
| mounting_method | UNTHREADED HOLE(S) |
| features_provided | HERMETICALLY SEALED CASE AND ELECTROSTATIC SENSITIVE |
| semiconductor_material | SILICON ALL SEMICONDUCTOR DEVICE DIODE |
| mounting_facility_quantity | 2 |
| terminal_type_and_quantity | 2 PIN AND 1 CASE |
| component_name_and_quantity | 2 SEMICONDUCTOR DEVICE DIODE |
| current_rating_per_characteristic | 30.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 500.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT ALL SEMICONDUCTOR DEVICE DIODE |
| voltage_rating_in_volts_per_characteristic | 54.0 MAXIMUM NONREPETITIVE PEAK REVERSE VOLTAGE AND 45.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE ALL SEMICONDUCTOR DEVICE DIODE |
| maximum_operating_temp_per_measurement_point | 150.0 CELSIUS JUNCTION DEGC |
| NSN | 5961-01-271-5340 |
| TEST DATA DOCUMENT | 96214-807880 DRAWING (THIS IS THE BASIC GOVERNING DRAWING, SUCH AS A CONTRACTOR DRAWING, ORIGINAL EQUIPMENT MANUFACTURER DRAWING, ETC.; EXCLUDES ANY SPECIFICATION, STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRAWING) |
| SEMICONDUCTOR MATERIAL | SILICON ALL SEMICONDUCTOR DEVICE DIODE |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 150.0 CELSIUS JUNCTION DEGC |
| CURRENT RATING PER CHARACTERISTIC | 30.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 500.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT ALL SEMICONDUCTOR DEVICE DIODE |
| OVERALL HEIGHT | 0.450 INCHES MAXIMUM IN |
| ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | CATHODE |
| OVERALL LENGTH | 1.573 INCHES MAXIMUM IN |
| OVERALL WIDTH | 1.050 INCHES MAXIMUM IN |
| MOUNTING FACILITY QUANTITY | 2 |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE AND ELECTROSTATIC SENSITIVE |