8011798-1 — MICROCIRCUIT,MEMORY

✓ Government record, cited

— · COMPONENT

PRODUCT OVERVIEW

8011798-1: MICROCIRCUIT,MEMORY.

The MICROCIRCUIT,MEMORY is a the manufacturer memory module engineered for enterprise server and workstation platforms requiring validated, high-reliability memory. Key specifications include body_width: 0.500 INCHES MINIMUM AND 0.610 INCHES MAXIMUM IN, body_height: 0.210 INCHES MAXIMUM IN, body_length: 1.290 INCHES MAXIMUM IN, features_provided: BIPOLAR AND ELECTROSTATIC SENSITIVE AND BURN IN AND MONOLITHIC AND PROGRAMMED AND SCHOTTKY, output_logic_form: TRANSISTOR-TRANSISTOR LOGIC, inclosure_material: CERAMIC. This part is cataloged in the U.S.

Government catalog under NSN 5962-01-335-3208, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS

8011798-1

NSN: 5962-01-335-3208
FSC: 5962 — Microcircuits, Electronic
CAGE: 60225 — L3 TECHNOLOGIES, INC. DIV OCEAN SYSTEMS (USA)

SPECIFICATIONS

body_width	0.500 INCHES MINIMUM AND 0.610 INCHES MAXIMUM IN
body_height	0.210 INCHES MAXIMUM IN
body_length	1.290 INCHES MAXIMUM IN
features_provided	BIPOLAR AND ELECTROSTATIC SENSITIVE AND BURN IN AND MONOLITHIC AND PROGRAMMED AND SCHOTTKY
output_logic_form	TRANSISTOR-TRANSISTOR LOGIC
inclosure_material	CERAMIC
memory_device_type	ROM
storage_temp_range	-65.0 TO 150.0 CELSIUS DEGC
test_data_document	96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.).
operating_temp_range	-55.0 TO 125.0 CELSIUS DEGC
input_circuit_pattern	13 INPUT
inclosure_configuration	DUAL-IN-LINE
NSN	5962-01-335-3208

COMPONENT DIAGRAM

KEY FEATURES

•

INPUT CIRCUIT PATTERN: 13 INPUT

•

INCLOSURE MATERIAL: CERAMIC

•

TERMINAL SURFACE TREATMENT: SOLDER

•

BODY WIDTH: 0.500 INCHES MINIMUM AND 0.610 INCHES MAXIMUM IN

•

BODY HEIGHT: 0.210 INCHES MAXIMUM IN

•

FEATURES PROVIDED: BIPOLAR AND ELECTROSTATIC SENSITIVE AND BURN IN AND MONOLITHIC AND PROGRAMMED AND SCHOTTKY

•

INCLOSURE CONFIGURATION: DUAL-IN-LINE

•

MEMORY DEVICE TYPE: ROM

TYPICAL APPLICATIONS

Server memory expansion for virtualization workloads
Database performance optimization (in-memory computing)
VDI and remote desktop session hosting
High-performance computing (HPC) clusters
Mail server and collaboration platform scaling
Application server tier expansion

TECHNICAL CHARACTERISTICS

INPUT CIRCUIT PATTERN	13 INPUT
INCLOSURE MATERIAL	CERAMIC
TERMINAL SURFACE TREATMENT	SOLDER
BODY WIDTH	0.500 INCHES MINIMUM AND 0.610 INCHES MAXIMUM IN
BODY HEIGHT	0.210 INCHES MAXIMUM IN
FEATURES PROVIDED	BIPOLAR AND ELECTROSTATIC SENSITIVE AND BURN IN AND MONOLITHIC AND PROGRAMMED AND SCHOTTKY
INCLOSURE CONFIGURATION	DUAL-IN-LINE
MEMORY DEVICE TYPE	ROM
CASE OUTLINE SOURCE AND DESIGNATOR	D-3 MIL-M-38510
BODY LENGTH	1.290 INCHES MAXIMUM IN

SUBSTITUTES & CROSS-REFERENCES 3

ROM/PROM FAMILY 026Reference document

Same NSN cross-reference

Reference document — Secondary reference

5962-3820802BJAReference document

Same NSN cross-reference

Reference document — Secondary reference

M38510/20802BJAReference document

Same NSN cross-reference

Reference document — Secondary reference

LIFECYCLE

NSN statusActive· U.S. Government catalog

Acquisition advice: Terminal item — no further procurement; issued until stock is exhaustedDemilitarization required — critical (Q)

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FREQUENTLY ASKED QUESTIONS

What is 8011798-1?

8011798-1 is a MICROCIRCUIT,MEMORY.

What parts can replace 8011798-1?

There are 3 known substitutes for 8011798-1: ROM/PROM FAMILY 026, 5962-3820802BJA, M38510/20802BJA. Substitute compatibility should be verified for your specific system.

What is the NSN for 8011798-1?

8011798-1 is cataloged in the U.S. Government catalog under NSN 5962-01-335-3208. This indicates validated use in U.S. government and defense supply chains.

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8011798-1 — MICROCIRCUIT,MEMORY

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