795-27: SEMICONDUCTOR DEVICE,DIODE.
The SEMICONDUCTOR DEVICE,DIODE is a the manufacturer industrial component. Key specifications include material: SILICON SEMICONDUCTOR, overall_length: 0.450 INCHES MAXIMUM IN, mounting_method: THREADED STUD(S), features_provided: HERMETICALLY SEALED CASE, nominal_thread_size: 0.250 INCHES IN, thread_series_designator: UNF. This part is cataloged in the U.S.
Government catalog under NSN 1610-00-215-2925, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.
Verify compatibility with your specific system configuration before ordering.
| material | SILICON SEMICONDUCTOR |
| overall_length | 0.450 INCHES MAXIMUM IN |
| mounting_method | THREADED STUD(S) |
| features_provided | HERMETICALLY SEALED CASE |
| nominal_thread_size | 0.250 INCHES IN |
| thread_series_designator | UNF |
| mounting_facility_quantity | 1 |
| overall_width_across_flats | 0.687 INCHES MAXIMUM IN |
| terminal_type_and_quantity | 1 TAB, SOLDER LUG AND 1 THREADED STUD |
| current_rating_per_characteristic | 40.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE |
| voltage_rating_in_volts_per_characteristic | 40.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 40.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE AND 48.0 MAXIMUM NONREPETITIVE PEAK REVERSE VOLTAGE |
| maximum_operating_temp_per_measurement_point | 150.0 CELSIUS JUNCTION DEGC |
| NSN | 1610-00-215-2925 |
No substitute or cross-reference records for this part.