77A112799P1: SEMICONDUCTOR DEVICES,UNITIZED.
The SEMICONDUCTOR DEVICES,UNITIZED is a the manufacturer industrial component. Key specifications include material: PLASTIC ENCLOSURE, overall_width: 0.340 INCHES NOMINAL IN, overall_length: 0.375 INCHES NOMINAL IN, mounting_method: TERMINAL, features_provided: ELECTROSTATIC SENSITIVE, semiconductor_material: SILICON ALL TRANSISTOR. This part is cataloged in the U.S.
Government catalog under NSN 5961-01-372-8127, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.
Verify compatibility with your specific system configuration before ordering.
| material | PLASTIC ENCLOSURE |
| overall_width | 0.340 INCHES NOMINAL IN |
| overall_length | 0.375 INCHES NOMINAL IN |
| mounting_method | TERMINAL |
| features_provided | ELECTROSTATIC SENSITIVE |
| semiconductor_material | SILICON ALL TRANSISTOR |
| terminal_type_and_quantity | 9 PIN |
| component_name_and_quantity | 4 TRANSISTOR |
| power_rating_per_characteristic | 10.0 WATTS NOMINAL TOTAL POWER DISSIPATION THIRD TRANSISTOR |
| current_rating_per_characteristic | 3.00 AMPERES NOMINAL COLLECTOR CURRENT, DC ALL TRANSISTOR |
| maximum_operating_temp_per_measurement_point | 125.0 CELSIUS JUNCTION DEGC |
| NSN | 5961-01-372-8127 |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | -60.0 NOMINAL BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND -4.0 NOMINAL BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN AND -60.0 NOMINAL BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN SECOND TRANSISTOR |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | -60.0 NOMINAL BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND -4.0 NOMINAL BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN AND -60.0 NOMINAL BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN THIRD TRANSISTOR |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 80.0 NOMINAL BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 5.0 NOMINAL BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN AND 50.0 NOMINAL BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN FIRST TRANSISTOR |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 80.0 NOMINAL BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 5.0 NOMINAL BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN AND 50.0 NOMINAL BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN FOURTH TRANSISTOR |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 125.0 CELSIUS JUNCTION DEGC |
| MOUNTING METHOD | TERMINAL |
| SEMICONDUCTOR MATERIAL | SILICON ALL TRANSISTOR |
| OVERALL LENGTH | 0.375 INCHES NOMINAL IN |
| COMPONENT NAME AND QUANTITY | 4 TRANSISTOR |
| OVERALL WIDTH | 0.340 INCHES NOMINAL IN |