77A112797P1: SEMICONDUCTOR DEVICES,UNITIZED.
The SEMICONDUCTOR DEVICES,UNITIZED is a the manufacturer industrial component. Key specifications include material: PLASTIC ENCLOSURE, overall_width: 0.340 INCHES NOMINAL IN, overall_length: 0.375 INCHES NOMINAL IN, mounting_method: TERMINAL, features_provided: ELECTROSTATIC SENSITIVE, semiconductor_material: SILICON ALL SEMICONDUCTOR. This part is cataloged in the U.S.
Government catalog under NSN 5961-01-372-8122, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.
Verify compatibility with your specific system configuration before ordering.
| material | PLASTIC ENCLOSURE |
| overall_width | 0.340 INCHES NOMINAL IN |
| overall_length | 0.375 INCHES NOMINAL IN |
| mounting_method | TERMINAL |
| features_provided | ELECTROSTATIC SENSITIVE |
| semiconductor_material | SILICON ALL SEMICONDUCTOR |
| terminal_type_and_quantity | 22 PIN |
| component_name_and_quantity | 3 SEMICONDUCTOR DEVICE DIODE AND 2 TRANSISTOR |
| current_rating_per_characteristic | 395.00 MILLIAMPERES NOMINAL FORWARD CURRENT, DC ALL SEMICONDUCTOR DEVICE DIODE |
| voltage_rating_in_volts_per_characteristic | 100.0 NOMINAL REVERSE VOLTAGE, INSTANTANEOUS ALL SEMICONDUCTOR DEVICE DIODE |
| maximum_operating_temp_per_measurement_point | 125.0 CELSIUS AMBIENT AIR DEGC |
| NSN | 5961-01-372-8122 |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 100.0 NOMINAL REVERSE VOLTAGE, INSTANTANEOUS ALL SEMICONDUCTOR DEVICE DIODE |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 30.0 NOMINAL GATE TO SOURCE VOLTAGE AND 90.0 NOMINAL DRAIN TO SOURCE VOLTAGE AND 90.0 NOMINAL DRAIN TO GATE VOLTAGE ALL TRANSISTOR |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 125.0 CELSIUS AMBIENT AIR DEGC |
| MOUNTING METHOD | TERMINAL |
| SEMICONDUCTOR MATERIAL | SILICON ALL SEMICONDUCTOR |
| OVERALL LENGTH | 0.375 INCHES NOMINAL IN |
| COMPONENT NAME AND QUANTITY | 3 SEMICONDUCTOR DEVICE DIODE AND 2 TRANSISTOR |
| OVERALL WIDTH | 0.340 INCHES NOMINAL IN |
| FEATURES PROVIDED | ELECTROSTATIC SENSITIVE |
| CURRENT RATING PER CHARACTERISTIC | 395.00 MILLIAMPERES NOMINAL FORWARD CURRENT, DC ALL SEMICONDUCTOR DEVICE DIODE |