77A112794P1: SEMICONDUCTOR DEVICES,UNITIZED.
The SEMICONDUCTOR DEVICES,UNITIZED is a the manufacturer industrial component. Key specifications include material: PLASTIC ENCLOSURE, overall_width: 0.250 INCHES NOMINAL IN, overall_length: 0.250 INCHES NOMINAL IN, mounting_method: TERMINAL, special_features: ALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: NPN, features_provided: ELECTROSTATIC SENSITIVE. This part is cataloged in the U.S.
Government catalog under NSN 5961-01-372-8124, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.
Verify compatibility with your specific system configuration before ordering.
| material | PLASTIC ENCLOSURE |
| overall_width | 0.250 INCHES NOMINAL IN |
| overall_length | 0.250 INCHES NOMINAL IN |
| mounting_method | TERMINAL |
| special_features | ALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: NPN |
| features_provided | ELECTROSTATIC SENSITIVE |
| semiconductor_material | SILICON ALL SEMICONDUCTOR |
| terminal_type_and_quantity | 14 PIN |
| component_name_and_quantity | 5 SEMICONDUCTOR DEVICE DIODE AND 2 TRANSISTOR |
| current_rating_per_characteristic | 75.00 MILLIAMPERES NOMINAL FORWARD CURRENT, DC ALL SEMICONDUCTOR |
| voltage_rating_in_volts_per_characteristic | 75.0 NOMINAL REVERSE VOLTAGE, DC ALL SEMICONDUCTOR DEVICE DIODE |
| maximum_operating_temp_per_measurement_point | 125.0 CELSIUS AMBIENT AIR DEGC |
| NSN | 5961-01-372-8124 |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 40.0 NOMINAL BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 4.5 NOMINAL BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN AND 15.0 NOMINAL COLLECTOR-TO-EMITTER, SUBSTAINING VOLTAGE, BASE OPEN-CIRCUITED AND 40.0 NOMINAL COLLECTOR-TO-EMITTER, SUBSTAINING VOLTAGE, BASE SHORT-CIRCUITEDTO EMITTER ALL TRANSISTOR |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 75.0 NOMINAL REVERSE VOLTAGE, DC ALL SEMICONDUCTOR DEVICE DIODE |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 125.0 CELSIUS AMBIENT AIR DEGC |
| MOUNTING METHOD | TERMINAL |
| SEMICONDUCTOR MATERIAL | SILICON ALL SEMICONDUCTOR |
| OVERALL LENGTH | 0.250 INCHES NOMINAL IN |
| COMPONENT NAME AND QUANTITY | 5 SEMICONDUCTOR DEVICE DIODE AND 2 TRANSISTOR |
| OVERALL WIDTH | 0.250 INCHES NOMINAL IN |
| FEATURES PROVIDED | ELECTROSTATIC SENSITIVE |
| CURRENT RATING PER CHARACTERISTIC | 75.00 MILLIAMPERES NOMINAL FORWARD CURRENT, DC ALL SEMICONDUCTOR |