77A102468P1: MICROCIRCUIT,MEMORY.
The MICROCIRCUIT,MEMORY is a the manufacturer memory module engineered for enterprise server and workstation platforms requiring validated, high-reliability memory. Key specifications include features_provided: BIPOLAR AND PROGRAMMABLE AND HERMETICALLY SEALED AND HIGH IMPEDANCE AND LOW LEVEL, output_logic_form: TRANSISTOR-TRANSISTOR LOGIC, inclosure_material: CERAMIC, memory_device_type: ROM, storage_temp_range: -65.0 TO 150.0 CELSIUS DEGC, input_circuit_pattern: 6 INPUT. This part is cataloged in the U.S.
Government catalog under NSN 5962-01-171-9685, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.
Verify compatibility with your specific system configuration before ordering.
| features_provided | BIPOLAR AND PROGRAMMABLE AND HERMETICALLY SEALED AND HIGH IMPEDANCE AND LOW LEVEL |
| output_logic_form | TRANSISTOR-TRANSISTOR LOGIC |
| inclosure_material | CERAMIC |
| memory_device_type | ROM |
| storage_temp_range | -65.0 TO 150.0 CELSIUS DEGC |
| input_circuit_pattern | 6 INPUT |
| inclosure_configuration | DUAL-IN-LINE |
| terminal_surface_treatment | SOLDER |
| case_outline_source_and_designator | D-3 MIL-M-38510 |
| voltage_rating_and_type_per_characteristic | 5.5 VOLTS NOMINAL POWER SOURCE |
| NSN | 5962-01-171-9685 |
| INPUT CIRCUIT PATTERN | 6 INPUT |
| INCLOSURE MATERIAL | CERAMIC |
| TERMINAL SURFACE TREATMENT | SOLDER |
| FEATURES PROVIDED | BIPOLAR AND PROGRAMMABLE AND HERMETICALLY SEALED AND HIGH IMPEDANCE AND LOW LEVEL |
| INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| MEMORY DEVICE TYPE | ROM |
| CASE OUTLINE SOURCE AND DESIGNATOR | D-3 MIL-M-38510 |
| STORAGE TEMP RANGE | -65.0 TO 150.0 CELSIUS DEGC |
| OUTPUT LOGIC FORM | TRANSISTOR-TRANSISTOR LOGIC |
| VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 5.5 VOLTS NOMINAL POWER SOURCE |