772931-1 — SEMICONDUCTOR DEVICE,DIODE

✓ Government record, cited

— · SFP TRANSCEIVER

PRODUCT OVERVIEW

772931-1: SEMICONDUCTOR DEVICE,DIODE.

The SEMICONDUCTOR DEVICE,DIODE is a the manufacturer industrial component. Key specifications include material: GLASS ENCLOSURE, overall_length: 0.170 INCHES MAXIMUM IN, mounting_method: TERMINAL, terminal_length: 1.000 INCHES MINIMUM IN, overall_diameter: 0.068 INCHES MINIMUM AND 0.076 INCHES MAXIMUM IN, features_provided: HERMETICALLY SEALED CASE. This part is cataloged in the U.S.

Government catalog under NSN 5961-01-030-4865, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS

772931-1

NSN: 5961-01-030-4865
FSC: 5961 — Semiconductor Devices and Associated Hardware
CAGE: 96214 — RAYTHEON COMPANY DBA RAYTHEON (USA)

SPECIFICATIONS

material	GLASS ENCLOSURE
overall_length	0.170 INCHES MAXIMUM IN
mounting_method	TERMINAL
terminal_length	1.000 INCHES MINIMUM IN
overall_diameter	0.068 INCHES MINIMUM AND 0.076 INCHES MAXIMUM IN
features_provided	HERMETICALLY SEALED CASE
terminal_type_and_quantity	2 UNINSULATED WIRE LEAD
power_rating_per_characteristic	250.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
current_rating_per_characteristic	10.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
voltage_rating_in_volts_per_characteristic	-100.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR TO EMITTER, WITH SPECIFIED VOLTAGE BETWEEN BASE AND EMITTER
maximum_operating_temp_per_measurement_point	100.0 CELSIUS CASE DEGC
NSN	5961-01-030-4865

COMPONENT DIAGRAM

KEY FEATURES

•

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -100.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR TO EMITTER, WITH SPECIFIED VOLTAGE BETWEEN BASE AND EMITTER

•

MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 CELSIUS CASE DEGC

•

OVERALL DIAMETER: 0.068 INCHES MINIMUM AND 0.076 INCHES MAXIMUM IN

•

TERMINAL LENGTH: 1.000 INCHES MINIMUM IN

•

MOUNTING METHOD: TERMINAL

•

FEATURES PROVIDED: HERMETICALLY SEALED CASE

•

CURRENT RATING PER CHARACTERISTIC: 10.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC

TECHNICAL CHARACTERISTICS

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC	-100.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR TO EMITTER, WITH SPECIFIED VOLTAGE BETWEEN BASE AND EMITTER
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT	100.0 CELSIUS CASE DEGC
OVERALL DIAMETER	0.068 INCHES MINIMUM AND 0.076 INCHES MAXIMUM IN
TERMINAL LENGTH	1.000 INCHES MINIMUM IN
MOUNTING METHOD	TERMINAL
OVERALL LENGTH	0.170 INCHES MAXIMUM IN
FEATURES PROVIDED	HERMETICALLY SEALED CASE
CURRENT RATING PER CHARACTERISTIC	10.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
MATERIAL	SILICON SEMICONDUCTOR
MATERIAL	GLASS ENCLOSURE

SUBSTITUTES & CROSS-REFERENCES 2

HPND-4166Reference document

Same NSN cross-reference

Reference document — Secondary reference

5082-3004Reference document

Same NSN cross-reference

Reference document — Secondary reference

LIFECYCLE

NSN statusActive· U.S. Government catalog

Acquisition advice: Normally procured from the manufacturer (OEM)No demilitarization required

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FREQUENTLY ASKED QUESTIONS

What is 772931-1?

772931-1 is a SEMICONDUCTOR DEVICE,DIODE.

What parts can replace 772931-1?

There are 2 known substitutes for 772931-1: HPND-4166, 5082-3004. Substitute compatibility should be verified for your specific system.

What is the NSN for 772931-1?

772931-1 is cataloged in the U.S. Government catalog under NSN 5961-01-030-4865. This indicates validated use in U.S. government and defense supply chains.

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772931-1 — SEMICONDUCTOR DEVICE,DIODE

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