7555228P1 — TRANSISTOR

✓ Government record, cited

— · SFP TRANSCEIVER

PRODUCT OVERVIEW

7555228P1: TRANSISTOR.

The TRANSISTOR is a the manufacturer industrial component. Key specifications include material: CERAMIC ENCLOSURE, overall_width: 0.0138 INCHES NOMINAL IN, overall_height: 0.0055 INCHES NOMINAL IN, overall_length: 0.0157 INCHES NOMINAL IN, mounting_method: PRESS FIT, features_provided: BURN IN AND ELECTROSTATIC SENSITIVE. This part is cataloged in the U.S.

Government catalog under NSN 5961-01-353-1490, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS

7555228P1

NSN: 5961-01-353-1490
FSC: 5961 — Semiconductor Devices and Associated Hardware
CAGE: 62104 — CALIFORNIA EASTERN LABS (USA)

SPECIFICATIONS

material	CERAMIC ENCLOSURE
overall_width	0.0138 INCHES NOMINAL IN
overall_height	0.0055 INCHES NOMINAL IN
overall_length	0.0157 INCHES NOMINAL IN
mounting_method	PRESS FIT
features_provided	BURN IN AND ELECTROSTATIC SENSITIVE
semiconductor_material	GALLIUM ARSENIDE
terminal_type_and_quantity	3 BONDING PAD
power_rating_per_characteristic	200.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
current_rating_per_characteristic	60.00 MILLIAMPERES MAXIMUM DRAIN CURRENT
voltage_rating_in_volts_per_characteristic	4.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND -3.0 MAXIMUM GATE TO SOURCE VOLTAGE
maximum_operating_temp_per_measurement_point	175.0 CELSIUS JUNCTION DEGC
NSN	5961-01-353-1490

COMPONENT DIAGRAM

KEY FEATURES

•

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 4.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND -3.0 MAXIMUM GATE TO SOURCE VOLTAGE

•

MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 CELSIUS JUNCTION DEGC

•

MOUNTING METHOD: PRESS FIT

•

SEMICONDUCTOR MATERIAL: GALLIUM ARSENIDE

•

FEATURES PROVIDED: BURN IN AND ELECTROSTATIC SENSITIVE

TECHNICAL CHARACTERISTICS

OVERALL HEIGHT	0.0055 INCHES NOMINAL IN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC	4.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND -3.0 MAXIMUM GATE TO SOURCE VOLTAGE
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT	175.0 CELSIUS JUNCTION DEGC
MOUNTING METHOD	PRESS FIT
SEMICONDUCTOR MATERIAL	GALLIUM ARSENIDE
OVERALL LENGTH	0.0157 INCHES NOMINAL IN
OVERALL WIDTH	0.0138 INCHES NOMINAL IN
FEATURES PROVIDED	BURN IN AND ELECTROSTATIC SENSITIVE
CURRENT RATING PER CHARACTERISTIC	60.00 MILLIAMPERES MAXIMUM DRAIN CURRENT
MATERIAL	CERAMIC ENCLOSURE

OTHER ITEMS IN FSC 5961 — Semiconductor Devices and Associated Hardware

Items in the same Federal Supply class. No interchangeability or substitution relationship is implied.

5961-00-000-0150 5961-00-000-4541 5961-00-000-5400 5961-00-000-7614 5961-00-000-8760 5961-00-001-1352 5961-00-001-2624 5961-00-001-2978

SUBSTITUTES & CROSS-REFERENCES

No substitute or cross-reference records for this part.

LIFECYCLE

NSN statusActive· U.S. Government catalog

Acquisition advice: Normally procured from the manufacturer (OEM)No demilitarization required

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FREQUENTLY ASKED QUESTIONS

What is 7555228P1?

7555228P1 is a TRANSISTOR.

What is the NSN for 7555228P1?

7555228P1 is cataloged in the U.S. Government catalog under NSN 5961-01-353-1490. This indicates validated use in U.S. government and defense supply chains.

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7555228P1 — TRANSISTOR

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