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7503603G006 — MICROCIRCUIT,MEMORY

✓ Government record, cited
— · COMPONENT
PRODUCT OVERVIEW

7503603G006: MICROCIRCUIT,MEMORY.

The MICROCIRCUIT,MEMORY is a the manufacturer memory module engineered for enterprise server and workstation platforms requiring validated, high-reliability memory. Key specifications include inclosure_material: CERAMIC, memory_device_type: ROM, operating_temp_range: -55.0 TO 125.0 CELSIUS DEGC, inclosure_configuration: LEADLESS FLAT PACK, terminal_surface_treatment: SOLDER, terminal_type_and_quantity: 28 LEADLESS. This part is cataloged in the U.S.

Government catalog under NSN 5962-01-418-4487, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS
7503603G006
NSN: 5962-01-418-4487
FSC: 5962 — Microcircuits, Electronic
CAGE: 03538 — LOCKHEED MARTIN CORPORATION DIV RMS (USA)
SPECIFICATIONS
inclosure_materialCERAMIC
memory_device_typeROM
operating_temp_range-55.0 TO 125.0 CELSIUS DEGC
inclosure_configurationLEADLESS FLAT PACK
terminal_surface_treatmentSOLDER
terminal_type_and_quantity28 LEADLESS
time_rating_per_chacteristic50.00 NANOSECONDS MAXIMUM ACCESS NS
part_name_assigned_by_controlling_agencyPROGRAMMED EPROM
voltage_rating_and_type_per_characteristic5.0 VOLTS NOMINAL POWER SOURCE
NSN5962-01-418-4487
COMPONENT DIAGRAM
COMPONENT MAIN IC EDGE CONNECTOR No detailed specs available MICROCIRCUIT,MEMORY TITLE COMPONENT PN 7503603G006 MFR MICROCIRCUIT,MEMORY
KEY FEATURES
•
INCLOSURE MATERIAL: CERAMIC
•
TERMINAL SURFACE TREATMENT: SOLDER
•
INCLOSURE CONFIGURATION: LEADLESS FLAT PACK
•
MEMORY DEVICE TYPE: ROM
•
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.0 VOLTS NOMINAL POWER SOURCE
•
OPERATING TEMP RANGE: -55.0 TO 125.0 CELSIUS DEGC
•
TERMINAL TYPE AND QUANTITY: 28 LEADLESS
TYPICAL APPLICATIONS
  • Server memory expansion for virtualization workloads
  • Database performance optimization (in-memory computing)
  • VDI and remote desktop session hosting
  • High-performance computing (HPC) clusters
  • Mail server and collaboration platform scaling
  • Application server tier expansion
TECHNICAL CHARACTERISTICS
INCLOSURE MATERIALCERAMIC
TERMINAL SURFACE TREATMENTSOLDER
INCLOSURE CONFIGURATIONLEADLESS FLAT PACK
MEMORY DEVICE TYPEROM
VOLTAGE RATING AND TYPE PER CHARACTERISTIC5.0 VOLTS NOMINAL POWER SOURCE
OPERATING TEMP RANGE-55.0 TO 125.0 CELSIUS DEGC
PART NAME ASSIGNED BY CONTROLLING AGENCYPROGRAMMED EPROM
TERMINAL TYPE AND QUANTITY28 LEADLESS
TIME RATING PER CHACTERISTIC50.00 NANOSECONDS MAXIMUM ACCESS NS
SUBSTITUTES & CROSS-REFERENCES 5
7503603G6Reference document
Same NSN cross-reference
Reference document — Secondary reference
ROM/PROMReference document
Same NSN cross-reference
Reference document — Secondary reference
CY7C265-50LMBReference document
Same NSN cross-reference
Reference document — Secondary reference
7503603G0006Reference document
Same NSN cross-reference
Reference document — Design control — primary reference
7555519P551Reference document
Same NSN cross-reference
Reference document — Secondary reference
LIFECYCLE
NSN statusActive· U.S. Government catalog
Acquisition advice: Insurance item — stocked against contingency demandDemilitarization required — mutilation + specific procedure
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FREQUENTLY ASKED QUESTIONS
What is 7503603G006?
7503603G006 is a MICROCIRCUIT,MEMORY.
What parts can replace 7503603G006?
There are 5 known substitutes for 7503603G006: 7503603G6, ROM/PROM, CY7C265-50LMB and 2 more. Substitute compatibility should be verified for your specific system.
What is the NSN for 7503603G006?
7503603G006 is cataloged in the U.S. Government catalog under NSN 5962-01-418-4487. This indicates validated use in U.S. government and defense supply chains.
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