74E4N681 — TRANSISTOR

✓ Government record, cited

— · SFP TRANSCEIVER

PRODUCT OVERVIEW

74E4N681: TRANSISTOR.

The TRANSISTOR is a the manufacturer industrial component. Key specifications include overall_width: 1.050 INCHES MAXIMUM IN, overall_height: 0.690 INCHES MINIMUM AND 0.820 INCHES MAXIMUM IN, overall_length: 0.155 INCHES MAXIMUM IN, mounting_method: UNTHREADED HOLE(S), features_provided: HERMETICALLY SEALED CASE, internal_configuration: JUNCTION CONTACT-DARLINGTON CONNECTED. This part is cataloged in the U.S.

Government catalog under NSN 5961-01-026-2007, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS

74E4N681

NSN: 5961-01-026-2007
FSC: 5961 — Semiconductor Devices and Associated Hardware
CAGE: 28687 — NAVY, UNITED STATES DEPARTMENT OF THE SPAWAR DBA SPACE AND NAVAL WAFARE COMMAND (USA)

SPECIFICATIONS

overall_width	1.050 INCHES MAXIMUM IN
overall_height	0.690 INCHES MINIMUM AND 0.820 INCHES MAXIMUM IN
overall_length	0.155 INCHES MAXIMUM IN
mounting_method	UNTHREADED HOLE(S)
features_provided	HERMETICALLY SEALED CASE
internal_configuration	JUNCTION CONTACT-DARLINGTON CONNECTED
semiconductor_material	SILICON
mounting_facility_quantity	2
terminal_type_and_quantity	1 CASE AND 2 PIN
internal_junction_configuration	NPN
power_rating_per_characteristic	150.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
current_rating_per_characteristic	200.00 MILLIAMPERES MAXIMUM BASE CURRENT, DC AND 20.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
NSN	5961-01-026-2007

COMPONENT DIAGRAM

KEY FEATURES

•

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 80.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC

•

MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 CELSIUS JUNCTION DEGC

•

MOUNTING FACILITY QUANTITY: 2

•

MOUNTING METHOD: UNTHREADED HOLE(S)

•

INTERNAL JUNCTION CONFIGURATION: NPN

•

SEMICONDUCTOR MATERIAL: SILICON

TECHNICAL CHARACTERISTICS

OVERALL HEIGHT	0.690 INCHES MINIMUM AND 0.820 INCHES MAXIMUM IN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC	80.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 80.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT	200.0 CELSIUS JUNCTION DEGC
MOUNTING FACILITY QUANTITY	2
MOUNTING METHOD	UNTHREADED HOLE(S)
INTERNAL JUNCTION CONFIGURATION	NPN
SEMICONDUCTOR MATERIAL	SILICON
OVERALL LENGTH	0.155 INCHES MAXIMUM IN
INTERNAL CONFIGURATION	JUNCTION CONTACT-DARLINGTON CONNECTED
OVERALL WIDTH	1.050 INCHES MAXIMUM IN

SUBSTITUTES & CROSS-REFERENCES 1

2N6058Reference document

Same NSN cross-reference

Reference document — Secondary reference

LIFECYCLE

NSN statusActive· U.S. Government catalog

No demilitarization required

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FREQUENTLY ASKED QUESTIONS

What is 74E4N681?

74E4N681 is a TRANSISTOR.

What parts can replace 74E4N681?

There is 1 known substitute for 74E4N681: 2N6058. Substitute compatibility should be verified for your specific system.

What is the NSN for 74E4N681?

74E4N681 is cataloged in the U.S. Government catalog under NSN 5961-01-026-2007. This indicates validated use in U.S. government and defense supply chains.

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74E4N681 — TRANSISTOR

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