The SEMICONDUCTOR DEVICES,UNITIZED is a the manufacturer industrial component. Key specifications include material: CERAMIC ENCLOSURE, overall_width: 0.358 INCHES MAXIMUM IN, overall_height: 0.100 INCHES MAXIMUM IN, overall_length: 0.358 INCHES MAXIMUM IN, mounting_method: PRESS FIT, special_features: ALL SEMICONDUCTOR DEVICE DIODE JUNCTION PATTERN ARRANGEMENT: PN. This product is currently in active production with full OEM support.
This part is cataloged in the Federal Logistics Information System (FLIS) under NSN 5961-01-302-7880, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.
Verify compatibility with your specific system configuration before ordering.
| material | CERAMIC ENCLOSURE |
| overall_width | 0.358 INCHES MAXIMUM IN |
| overall_height | 0.100 INCHES MAXIMUM IN |
| overall_length | 0.358 INCHES MAXIMUM IN |
| mounting_method | PRESS FIT |
| special_features | ALL SEMICONDUCTOR DEVICE DIODE JUNCTION PATTERN ARRANGEMENT: PN |
| semiconductor_material | SILICON ALL TRANSISTOR |
| terminal_type_and_quantity | 20 UNINSULATED WIRE LEAD |
| component_name_and_quantity | 2 SEMICONDUCTOR DEVICE DIODE AND 2 TRANSISTOR |
| current_rating_per_characteristic | 100.00 MICROAMPERES MAXIMUM FORWARD CURRENT, DC ALL SEMICONDUCTOR DEVICE DIODE |
| voltage_rating_in_volts_per_characteristic | 0.9 MAXIMUM FORWARD VOLTAGE, DC ALL SEMICONDUCTOR DEVICE DIODE |
| maximum_operating_temp_per_measurement_point | 200.0 CELSIUS JUNCTION DEGC |
| NSN | 5961-01-302-7880 |
| SEMICONDUCTOR MATERIAL | SILICON ALL SEMICONDUCTOR DEVICE DIODE |
| OVERALL HEIGHT | 0.100 INCHES MAXIMUM IN |
| MATERIAL | CERAMIC ENCLOSURE |
| SPECIAL FEATURES | ALL SEMICONDUCTOR DEVICE DIODE JUNCTION PATTERN ARRANGEMENT: PN |
| SEMICONDUCTOR MATERIAL | SILICON ALL TRANSISTOR |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 CELSIUS JUNCTION DEGC |
| CURRENT RATING PER CHARACTERISTIC | 175.00 MILLIAMPERES MAXIMUM ZERO-GATE-VOLTAGE DRAIN CURRENT ALL TRANSISTOR |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 15.0 MAXIMUM DRAIN TO SOURCE VOLTAGE ALL TRANSISTOR |
| CURRENT RATING PER CHARACTERISTIC | 100.00 MICROAMPERES MAXIMUM FORWARD CURRENT, DC ALL SEMICONDUCTOR DEVICE DIODE |
| TERMINAL TYPE AND QUANTITY | 20 UNINSULATED WIRE LEAD |