71011433001: TRANSISTOR.
The TRANSISTOR is a the manufacturer industrial component. Key specifications include material: CERAMIC ENCLOSURE, overall_width: 0.070 INCHES NOMINAL IN, overall_height: 0.035 INCHES NOMINAL IN, overall_length: 0.070 INCHES NOMINAL IN, mounting_method: TERMINAL, terminal_length: 0.213 INCHES NOMINAL IN. This part is cataloged in the U.S.
Government catalog under NSN 5961-01-328-2839, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.
Verify compatibility with your specific system configuration before ordering.
| material | CERAMIC ENCLOSURE |
| overall_width | 0.070 INCHES NOMINAL IN |
| overall_height | 0.035 INCHES NOMINAL IN |
| overall_length | 0.070 INCHES NOMINAL IN |
| mounting_method | TERMINAL |
| terminal_length | 0.213 INCHES NOMINAL IN |
| features_provided | HERMETICALLY SEALED CASE |
| internal_configuration | FIELD EFFECT |
| semiconductor_material | GALLIUM ARSENIDE |
| terminal_type_and_quantity | 4 RIBBON |
| precious_material_and_location | PACKAGE BASE GOLD |
| power_rating_per_characteristic | 450.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION |
| NSN | 5961-01-328-2839 |
| OVERALL HEIGHT | 0.035 INCHES NOMINAL IN |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 7.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND -4.0 MAXIMUM GATE TO SOURCE VOLTAGE |
| TERMINAL LENGTH | 0.213 INCHES NOMINAL IN |
| MOUNTING METHOD | TERMINAL |
| SEMICONDUCTOR MATERIAL | GALLIUM ARSENIDE |
| OVERALL LENGTH | 0.070 INCHES NOMINAL IN |
| INTERNAL CONFIGURATION | FIELD EFFECT |
| OVERALL WIDTH | 0.070 INCHES NOMINAL IN |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| PRECIOUS MATERIAL AND LOCATION | PACKAGE BASE GOLD |