Name: MICROCIRCUIT,MEMORY
Brand: Unknown
SKU: 654P5501-3

654P5501-3 ✓ Verified by PartsTable

— · COMPONENT

WHAT YOU NEED TO KNOW

Verify manufacturer and server generation compatibility Check if Option PN or Spare PN — same part, different channel

Confirm exact part number — similar PNs may be different parts

PRODUCT OVERVIEW

The MICROCIRCUIT,MEMORY is a the manufacturer memory module engineered for enterprise server and workstation platforms requiring validated, high-reliability memory. Key specifications include body_width: 0.500 INCHES MINIMUM AND 0.610 INCHES MAXIMUM IN, body_height: 0.150 INCHES MINIMUM AND 0.210 INCHES MAXIMUM IN, body_length: 1.290 INCHES MAXIMUM IN, memory_capacity: UNKNOWN, features_provided: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND PROGRAMMABLE AND W/BUFFERED OUTPUT, output_logic_form: N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC. This product is currently in active production with full OEM support.

This part is cataloged in the Federal Logistics Information System (FLIS) under NSN 5962-01-109-7816, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS

654P5501-3

NSN: 5962-01-109-7816
FSC: 5962
CAGE: 81755 — LOCKHEED MARTIN CORPORATION DIV LOCKHEED MARTIN AERONAUTICS COMPANY (USA)

SPECIFICATIONS

body_width	0.500 INCHES MINIMUM AND 0.610 INCHES MAXIMUM IN
body_height	0.150 INCHES MINIMUM AND 0.210 INCHES MAXIMUM IN
body_length	1.290 INCHES MAXIMUM IN
memory_capacity	UNKNOWN
features_provided	HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND PROGRAMMABLE AND W/BUFFERED OUTPUT
output_logic_form	N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC
inclosure_material	CERAMIC AND GLASS
memory_device_type	ROM
storage_temp_range	-65.0 TO 125.0 CELSIUS DEGC
operating_temp_range	-55.0 TO 125.0 CELSIUS DEGC
input_circuit_pattern	11 INPUT
end_item_identification	TRAINING SET,ELECTRONIC WARFARE,TYPE AN/MST-T1
NSN	5962-01-109-7816

COMPONENT DIAGRAM

KEY FEATURES

•

MAXIMUM POWER DISSIPATION RATING: 1.0 WATTS

•

OUTPUT LOGIC FORM: N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC

•

INCLOSURE CONFIGURATION: DUAL-IN-LINE

•

CASE OUTLINE SOURCE AND DESIGNATOR: D-3 MIL-M-38510

•

TIME RATING PER CHACTERISTIC: 450.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 450.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT NS

•

VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 6.0 VOLTS MAXIMUM POWER SOURCE

•

MEMORY CAPACITY: UNKNOWN

•

MEMORY DEVICE TYPE: ROM

TYPICAL APPLICATIONS

Server memory expansion for virtualization workloads
Database performance optimization (in-memory computing)
VDI and remote desktop session hosting
High-performance computing (HPC) clusters
Mail server and collaboration platform scaling
Application server tier expansion

TECHNICAL CHARACTERISTICS (FLIS)

MAXIMUM POWER DISSIPATION RATING	1.0 WATTS
OUTPUT LOGIC FORM	N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC
INCLOSURE CONFIGURATION	DUAL-IN-LINE
CASE OUTLINE SOURCE AND DESIGNATOR	D-3 MIL-M-38510
TIME RATING PER CHACTERISTIC	450.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 450.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT NS
VOLTAGE RATING AND TYPE PER CHARACTERISTIC	6.0 VOLTS MAXIMUM POWER SOURCE
MEMORY CAPACITY	UNKNOWN
MEMORY DEVICE TYPE	ROM
TERMINAL SURFACE TREATMENT	SOLDER
TERMINAL TYPE AND QUANTITY	24 PRINTED CIRCUIT

VERIFIED SUBSTITUTES & CROSS-REFERENCES 13

M38510/22101BJBInterchangeable