647468-1 — TRANSISTOR

✓ Government record, cited

— · SFP TRANSCEIVER

PRODUCT OVERVIEW

647468-1: TRANSISTOR.

The TRANSISTOR is a the manufacturer industrial component. Key specifications include material: PLASTIC ENCLOSURE, overall_width: 0.103 INCHES MAXIMUM IN, overall_height: 0.061 INCHES MAXIMUM IN, overall_length: 0.119 INCHES MAXIMUM IN, mounting_method: TERMINAL, internal_configuration: FIELD EFFECT-DUAL GATE. This part is cataloged in the U.S.

Government catalog under NSN 5961-01-422-6529, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS

647468-1

NSN: 5961-01-422-6529
FSC: 5961 — Semiconductor Devices and Associated Hardware
CAGE: 37695 — RAYTHEON COMPANY (USA)

SPECIFICATIONS

material	PLASTIC ENCLOSURE
overall_width	0.103 INCHES MAXIMUM IN
overall_height	0.061 INCHES MAXIMUM IN
overall_length	0.119 INCHES MAXIMUM IN
mounting_method	TERMINAL
internal_configuration	FIELD EFFECT-DUAL GATE
semiconductor_material	SILICON
power_rating_per_characteristic	200.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
current_rating_per_characteristic	30.00 MILLIAMPERES MAXIMUM DRAIN CURRENT
voltage_rating_in_volts_per_characteristic	20.0 MAXIMUM DRAIN TO SOURCE VOLTAGE
maximum_operating_temp_per_measurement_point	150.0 CELSIUS JUNCTION DEGC
NSN	5961-01-422-6529

COMPONENT DIAGRAM

KEY FEATURES

•

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 MAXIMUM DRAIN TO SOURCE VOLTAGE

•

MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 CELSIUS JUNCTION DEGC

•

MOUNTING METHOD: TERMINAL

•

SEMICONDUCTOR MATERIAL: SILICON

•

INTERNAL CONFIGURATION: FIELD EFFECT-DUAL GATE

TECHNICAL CHARACTERISTICS

OVERALL HEIGHT	0.061 INCHES MAXIMUM IN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC	20.0 MAXIMUM DRAIN TO SOURCE VOLTAGE
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT	150.0 CELSIUS JUNCTION DEGC
MOUNTING METHOD	TERMINAL
SEMICONDUCTOR MATERIAL	SILICON
OVERALL LENGTH	0.119 INCHES MAXIMUM IN
INTERNAL CONFIGURATION	FIELD EFFECT-DUAL GATE
OVERALL WIDTH	0.103 INCHES MAXIMUM IN
CURRENT RATING PER CHARACTERISTIC	30.00 MILLIAMPERES MAXIMUM DRAIN CURRENT
TEST DATA DOCUMENT	37695-647468 DRAWING (THIS IS THE BASIC GOVERNING DRAWING, SUCH AS A CONTRACTOR DRAWING, ORIGINAL EQUIPMENT MANUFACTURER DRAWING, ETC.; EXCLUDES ANY SPECIFICATION, STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRAWING)

OTHER ITEMS IN FSC 5961 — Semiconductor Devices and Associated Hardware

Items in the same Federal Supply class. No interchangeability or substitution relationship is implied.

5961-00-000-0150 5961-00-000-4541 5961-00-000-5400 5961-00-000-7614 5961-00-000-8760 5961-00-001-1352 5961-00-001-2624 5961-00-001-2978

SUBSTITUTES & CROSS-REFERENCES 2

BF994SSame NSN cross-reference

Same NSN cross-reference

Also cataloged under this NSN

BF994S PART 1Reference document

Same NSN cross-reference

Reference document — Secondary reference

LIFECYCLE

NSN statusActive· U.S. Government catalog

Acquisition advice: Insurance item — stocked against contingency demandDemilitarization required — critical (Q)

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FREQUENTLY ASKED QUESTIONS

What is 647468-1?

647468-1 is a TRANSISTOR.

What parts can replace 647468-1?

There are 2 known substitutes for 647468-1: BF994S, BF994S PART 1. Substitute compatibility should be verified for your specific system.

What is the NSN for 647468-1?

647468-1 is cataloged in the U.S. Government catalog under NSN 5961-01-422-6529. This indicates validated use in U.S. government and defense supply chains.

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647468-1 — TRANSISTOR

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