645A532H01 — LIGHT EMITTING DIODE

✓ Government record, cited

— · COMPONENT

PRODUCT OVERVIEW

645A532H01: LIGHT EMITTING DIODE.

The LIGHT EMITTING DIODE is a the manufacturer industrial component. Key specifications include material: PLASTIC ENCLOSURE, overall_width: 0.245 INCHES NOMINAL IN, overall_height: 0.245 INCHES NOMINAL IN, overall_length: 0.470 INCHES NOMINAL IN, mounting_method: TERMINAL, lens_transparency: TRANSLUCENT. This part is cataloged in the U.S.

Government catalog under NSN 5980-01-203-1638, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS

645A532H01

NSN: 5980-01-203-1638
FSC: 5980 — Optoelectronic Devices and Associated Hardware
CAGE: 48306 — NORTHROP GRUMMAN SUPPORT SERVICES CORP (USA)

SPECIFICATIONS

material	PLASTIC ENCLOSURE
overall_width	0.245 INCHES NOMINAL IN
overall_height	0.245 INCHES NOMINAL IN
overall_length	0.470 INCHES NOMINAL IN
mounting_method	TERMINAL
lens_transparency	TRANSLUCENT
luminous_intensity	3.0 MILLICANDELA MINIMUM
semiconductor_material	GALLIUM ARSENIDE PHOSPHIDE
end_item_identification	FMS UNIQUE,WR-ALC
terminal_type_and_quantity	2 PIN
color_tone_produced_per_source	RED LENS
power_rating_per_characteristic	120.0 MILLIWATTS MAXIMUM FORWARD POWER DISSIPATION, MAXIMUM PEAK, TOTAL VALUE
NSN	5980-01-203-1638

COMPONENT DIAGRAM

KEY FEATURES

•

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.0 MINIMUM BREAKDOWN VOLTAGE, DC

•

MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 CELSIUS AMBIENT AIR DEGC

•

MOUNTING METHOD: TERMINAL

•

SEMICONDUCTOR MATERIAL: GALLIUM ARSENIDE PHOSPHIDE

•

LUMINOUS INTENSITY: 3.0 MILLICANDELA MINIMUM

TECHNICAL CHARACTERISTICS

OVERALL HEIGHT	0.245 INCHES NOMINAL IN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC	5.0 MINIMUM BREAKDOWN VOLTAGE, DC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT	100.0 CELSIUS AMBIENT AIR DEGC
MOUNTING METHOD	TERMINAL
SEMICONDUCTOR MATERIAL	GALLIUM ARSENIDE PHOSPHIDE
LUMINOUS INTENSITY	3.0 MILLICANDELA MINIMUM
OVERALL LENGTH	0.470 INCHES NOMINAL IN
OVERALL WIDTH	0.245 INCHES NOMINAL IN
CURRENT RATING PER CHARACTERISTIC	35.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
LENS TRANSPARENCY	TRANSLUCENT

SUBSTITUTES & CROSS-REFERENCES 4

62083-103Reference document

Same NSN cross-reference

Reference document — Secondary reference

1N6092 OPT 100Reference document

Same NSN cross-reference

Reference document — Secondary reference

SP831014Reference document

Same NSN cross-reference

Reference document — Secondary reference

JANTX1N6092Reference document

Same NSN cross-reference

Reference document — Secondary reference

LIFECYCLE

NSN statusActive· U.S. Government catalog

Acquisition advice: Normally procured from the manufacturer (OEM)No demilitarization required

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FREQUENTLY ASKED QUESTIONS

What is 645A532H01?

645A532H01 is a LIGHT EMITTING DIODE.

What parts can replace 645A532H01?

There are 4 known substitutes for 645A532H01: 62083-103, 1N6092 OPT 100, SP831014 and 1 more. Substitute compatibility should be verified for your specific system.

What is the NSN for 645A532H01?

645A532H01 is cataloged in the U.S. Government catalog under NSN 5980-01-203-1638. This indicates validated use in U.S. government and defense supply chains.

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645A532H01 — LIGHT EMITTING DIODE

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