63A141975P1 — LIGHT EMITTING DIODE

✓ Government record, cited

— · COMPONENT

PRODUCT OVERVIEW

63A141975P1: LIGHT EMITTING DIODE.

The LIGHT EMITTING DIODE is a the manufacturer industrial component. Key specifications include material: GLASS ENCLOSURE, overall_length: 0.650 INCHES MAXIMUM IN, mounting_method: PRESS FIT, overall_diameter: 0.245 INCHES MAXIMUM IN, lens_transparency: TRANSLUCENT, luminous_intensity: 20.0 MILLICANDELA NOMINAL. This part is cataloged in the U.S.

Government catalog under NSN 5980-01-333-3907, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS

63A141975P1

NSN: 5980-01-333-3907
FSC: 5980 — Optoelectronic Devices and Associated Hardware
CAGE: 16331 — LOCKHEED MARTIN CORPORATION DIV ROTARY AND MISSION SYSTEMS (USA)

SPECIFICATIONS

material	GLASS ENCLOSURE
overall_length	0.650 INCHES MAXIMUM IN
mounting_method	PRESS FIT
overall_diameter	0.245 INCHES MAXIMUM IN
lens_transparency	TRANSLUCENT
luminous_intensity	20.0 MILLICANDELA NOMINAL
internal_configuration	POINT CONTACT
semiconductor_material	GALLIUM ARSENIDE PHOSPHIDE
terminal_type_and_quantity	1 FLANGE AND 1 PIN
color_tone_produced_per_source	GREEN LENS
internal_junction_configuration	PN
power_rating_per_characteristic	120.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
NSN	5980-01-333-3907

COMPONENT DIAGRAM

KEY FEATURES

•

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 24.0 NOMINAL FORWARD VOLTAGE, DC

•

MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 CELSIUS JUNCTION DEGC

•

OVERALL DIAMETER: 0.245 INCHES MAXIMUM IN

•

MOUNTING METHOD: PRESS FIT

•

INTERNAL JUNCTION CONFIGURATION: PN

•

SEMICONDUCTOR MATERIAL: GALLIUM ARSENIDE PHOSPHIDE

•

LUMINOUS INTENSITY: 20.0 MILLICANDELA NOMINAL

TECHNICAL CHARACTERISTICS

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC	24.0 NOMINAL FORWARD VOLTAGE, DC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT	100.0 CELSIUS JUNCTION DEGC
OVERALL DIAMETER	0.245 INCHES MAXIMUM IN
MOUNTING METHOD	PRESS FIT
INTERNAL JUNCTION CONFIGURATION	PN
SEMICONDUCTOR MATERIAL	GALLIUM ARSENIDE PHOSPHIDE
LUMINOUS INTENSITY	20.0 MILLICANDELA NOMINAL
OVERALL LENGTH	0.650 INCHES MAXIMUM IN
INTERNAL CONFIGURATION	POINT CONTACT
CURRENT RATING PER CHARACTERISTIC	40.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC

OTHER ITEMS IN FSC 5980 — Optoelectronic Devices and Associated Hardware

Items in the same Federal Supply class. No interchangeability or substitution relationship is implied.

5980-00-005-9850 5980-00-007-7654 5980-00-008-5173 5980-00-009-3039 5980-00-010-1721 5980-00-019-1445 5980-00-027-8087 5980-00-028-3463

SUBSTITUTES & CROSS-REFERENCES 2

MF200-UG24H-NReference document

Same NSN cross-reference

Reference document — Secondary reference

MF200-UG24HReference document

Same NSN cross-reference

Reference document — Secondary reference

LIFECYCLE

NSN statusActive· U.S. Government catalog

Acquisition advice: Terminal item — stock exhausted; no further procurementNo demilitarization required

Ready to buy 63A141975P1?

Compare prices from verified sellers on eBay

Buy on eBay →

As an eBay Partner, PartsTable may earn a commission. Your price is not affected.

FREQUENTLY ASKED QUESTIONS

What is 63A141975P1?

63A141975P1 is a LIGHT EMITTING DIODE.

What parts can replace 63A141975P1?

There are 2 known substitutes for 63A141975P1: MF200-UG24H-N, MF200-UG24H. Substitute compatibility should be verified for your specific system.

What is the NSN for 63A141975P1?

63A141975P1 is cataloged in the U.S. Government catalog under NSN 5980-01-333-3907. This indicates validated use in U.S. government and defense supply chains.

Community Feedback

63A141975P1 — LIGHT EMITTING DIODE

Request a Quote — 63A141975P1