The MICROCIRCUIT,MEMORY is a the manufacturer memory module engineered for enterprise server and workstation platforms requiring validated, high-reliability memory. Key specifications include body_width: 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM IN, body_height: 0.120 INCHES MINIMUM AND 0.185 INCHES MAXIMUM IN, body_length: 0.930 INCHES MAXIMUM IN, memory_capacity: UNKNOWN, output_logic_form: TRANSISTOR-TRANSISTOR LOGIC, inclosure_material: CERAMIC AND GLASS. This product is currently in active production with full OEM support.
This part is cataloged in the Federal Logistics Information System (FLIS) under NSN 5962-01-081-5339, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.
Verify compatibility with your specific system configuration before ordering.
| body_width | 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM IN |
| body_height | 0.120 INCHES MINIMUM AND 0.185 INCHES MAXIMUM IN |
| body_length | 0.930 INCHES MAXIMUM IN |
| memory_capacity | UNKNOWN |
| features_provided | HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND W/STORAGE AND PROGRAMMABLE AND PROGRAMMED AND BIPOLAR AND W/DECODED OUTPUT AND 3-STATE OUTPUT |
| output_logic_form | TRANSISTOR-TRANSISTOR LOGIC |
| inclosure_material | CERAMIC AND GLASS |
| memory_device_type | ROM |
| storage_temp_range | -65.0 TO 150.0 CELSIUS DEGC |
| operating_temp_range | -55.0 TO 125.0 CELSIUS DEGC |
| input_circuit_pattern | 12 INPUT |
| inclosure_configuration | DUAL-IN-LINE |
| NSN | 5962-01-081-5339 |
| TERMINAL TYPE AND QUANTITY | 18 PRINTED CIRCUIT |
| VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 5.5 VOLTS MAXIMUM POWER SOURCE |
| TERMINAL SURFACE TREATMENT | SOLDER |
| TEST DATA DOCUMENT | 97942-637A594 DRAWING (THIS IS THE BASIC GOVERNING DRAWING, SUCH AS A CONTRACTOR DRAWING, ORIGINAL EQUIPMENT MANUFACTURER DRAWING, ETC.; EXCLUDES ANY SPECIFICATION, STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRAWING) |
| MEMORY CAPACITY | UNKNOWN |
| TIME RATING PER CHACTERISTIC | 85.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 85.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT NS |
| MEMORY DEVICE TYPE | ROM |
| FEATURES PROVIDED | HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND W/STORAGE AND PROGRAMMABLE AND PROGRAMMED AND BIPOLAR AND W/DECODED OUTPUT AND 3-STATE OUTPUT |
| INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| STORAGE TEMP RANGE | -65.0 TO 150.0 CELSIUS DEGC |