635A716H01 — SEMICONDUCTOR DEVICE,THYRISTOR

✓ Government record, cited

— · SFP TRANSCEIVER

PRODUCT OVERVIEW

635A716H01: SEMICONDUCTOR DEVICE,THYRISTOR.

The SEMICONDUCTOR DEVICE,THYRISTOR is a the manufacturer industrial component. Key specifications include material: CERAMIC ENCLOSURE, overall_length: 0.520 INCHES NOMINAL IN, mounting_method: PRESS FIT, special_features: NSN RESTRICTED TO USE BY NWS DEPOT TEAM ONLY, semiconductor_material: SILICON, end_item_identification: AIRPORT SURVEILLANCE RADAR (ASR-9); NEXT GENERATION RADAR (NEXRAD). This part is cataloged in the U.S.

Government catalog under NSN 5961-01-060-6663, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS

635A716H01

NSN: 5961-01-060-6663
FSC: 5961 — Semiconductor Devices and Associated Hardware
CAGE: 48306 — NORTHROP GRUMMAN SUPPORT SERVICES CORP (USA)

SPECIFICATIONS

material	CERAMIC ENCLOSURE
overall_length	0.520 INCHES NOMINAL IN
mounting_method	PRESS FIT
special_features	NSN RESTRICTED TO USE BY NWS DEPOT TEAM ONLY
semiconductor_material	SILICON
end_item_identification	AIRPORT SURVEILLANCE RADAR (ASR-9); NEXT GENERATION RADAR (NEXRAD)
terminal_type_and_quantity	2 CASE
current_rating_per_characteristic	100.00 MILLIAMPERES NOMINAL HOLDING CURRENT, DC
voltage_rating_in_volts_per_characteristic	1300.0 NOMINAL ON-STATE VOLTAGE, DC
maximum_operating_temp_per_measurement_point	125.0 CELSIUS JUNCTION DEGC
NSN	5961-01-060-6663

COMPONENT DIAGRAM

KEY FEATURES

•

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1300.0 NOMINAL ON-STATE VOLTAGE, DC

•

MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 CELSIUS JUNCTION DEGC

•

MOUNTING METHOD: PRESS FIT

•

SEMICONDUCTOR MATERIAL: SILICON

•

CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES NOMINAL HOLDING CURRENT, DC

TECHNICAL CHARACTERISTICS

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC	1300.0 NOMINAL ON-STATE VOLTAGE, DC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT	125.0 CELSIUS JUNCTION DEGC
MOUNTING METHOD	PRESS FIT
SEMICONDUCTOR MATERIAL	SILICON
OVERALL LENGTH	0.520 INCHES NOMINAL IN
CURRENT RATING PER CHARACTERISTIC	100.00 MILLIAMPERES NOMINAL HOLDING CURRENT, DC
SPECIAL FEATURES	NSN RESTRICTED TO USE BY NWS DEPOT TEAM ONLY
END ITEM IDENTIFICATION	AIRPORT SURVEILLANCE RADAR (ASR-9); NEXT GENERATION RADAR (NEXRAD)
MATERIAL	CERAMIC ENCLOSURE
TERMINAL TYPE AND QUANTITY	2 CASE

SUBSTITUTES & CROSS-REFERENCES 1

589R131H01Reference document

Same NSN cross-reference

Reference document — Advisory reference — outside the item-of-supply concept

LIFECYCLE

NSN statusCancelled· U.S. Government catalog

Demilitarization required — mutilation

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FREQUENTLY ASKED QUESTIONS

What is 635A716H01?

635A716H01 is a SEMICONDUCTOR DEVICE,THYRISTOR.

What parts can replace 635A716H01?

There is 1 known substitute for 635A716H01: 589R131H01. Substitute compatibility should be verified for your specific system.

What is the NSN for 635A716H01?

635A716H01 is cataloged in the U.S. Government catalog under NSN 5961-01-060-6663. This indicates validated use in U.S. government and defense supply chains.

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635A716H01 — SEMICONDUCTOR DEVICE,THYRISTOR

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