619172-1 — TRANSISTOR

✓ Government record, cited

— · SFP TRANSCEIVER

PRODUCT OVERVIEW

619172-1: TRANSISTOR.

The TRANSISTOR is a the manufacturer industrial component. Key specifications include overall_length: 0.360 INCHES NOMINAL IN, mounting_method: UNTHREADED HOLE(S), overall_diameter: 0.620 INCHES MAXIMUM IN, features_provided: HERMETICALLY SEALED CASE, internal_configuration: JUNCTION CONTACT, semiconductor_material: SILICON. This part is cataloged in the U.S.

Government catalog under NSN 5961-00-465-8305, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS

619172-1

NSN: 5961-00-465-8305
FSC: 5961 — Semiconductor Devices and Associated Hardware
CAGE: 16758 — GENERAL MOTORS CORP DELCO ELECTRONICS DIV (USA)

SPECIFICATIONS

overall_length	0.360 INCHES NOMINAL IN
mounting_method	UNTHREADED HOLE(S)
overall_diameter	0.620 INCHES MAXIMUM IN
features_provided	HERMETICALLY SEALED CASE
internal_configuration	JUNCTION CONTACT
semiconductor_material	SILICON
mounting_facility_quantity	2
terminal_type_and_quantity	2 UNINSULATED WIRE LEAD AND 1 CASE
internal_junction_configuration	NPN
power_rating_per_characteristic	125.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
current_rating_per_characteristic	2.00 AMPERES MAXIMUM BASE CURRENT, DC AND 5.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
maximum_operating_temp_per_measurement_point	200.0 CELSIUS JUNCTION DEGC
NSN	5961-00-465-8305

COMPONENT DIAGRAM

KEY FEATURES

•

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 400.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 5.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN

•

MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 CELSIUS JUNCTION DEGC

•

MOUNTING FACILITY QUANTITY: 2

•

OVERALL DIAMETER: 0.620 INCHES MAXIMUM IN

•

MOUNTING METHOD: UNTHREADED HOLE(S)

•

INTERNAL JUNCTION CONFIGURATION: NPN

•

SEMICONDUCTOR MATERIAL: SILICON

TECHNICAL CHARACTERISTICS

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC	400.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 400.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 5.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT	200.0 CELSIUS JUNCTION DEGC
MOUNTING FACILITY QUANTITY	2
OVERALL DIAMETER	0.620 INCHES MAXIMUM IN
MOUNTING METHOD	UNTHREADED HOLE(S)
INTERNAL JUNCTION CONFIGURATION	NPN
SEMICONDUCTOR MATERIAL	SILICON
OVERALL LENGTH	0.360 INCHES NOMINAL IN
INTERNAL CONFIGURATION	JUNCTION CONTACT
FEATURES PROVIDED	HERMETICALLY SEALED CASE

SUBSTITUTES & CROSS-REFERENCES 2

2N5241Reference document

Same NSN cross-reference

Reference document — Secondary reference

SJ2535Reference document

Same NSN cross-reference

Reference document — Design control — primary reference

LIFECYCLE

NSN statusActive· U.S. Government catalog

No demilitarization required

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FREQUENTLY ASKED QUESTIONS

What is 619172-1?

619172-1 is a TRANSISTOR.

What parts can replace 619172-1?

There are 2 known substitutes for 619172-1: 2N5241, SJ2535. Substitute compatibility should be verified for your specific system.

What is the NSN for 619172-1?

619172-1 is cataloged in the U.S. Government catalog under NSN 5961-00-465-8305. This indicates validated use in U.S. government and defense supply chains.

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619172-1 — TRANSISTOR

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