The TRANSISTOR is a the manufacturer industrial component. Key specifications include mounting_method: TERMINAL, terminal_length: 1.500 INCHES MINIMUM IN, special_features: LEADS TO BE LAP-WELDED; JUNCTION PATTERN ARRANGEMENT: NPN, features_provided: HERMETICALLY SEALED CASE, internal_configuration: JUNCTION CONTACT, semiconductor_material: SILICON. This product is currently in active production with full OEM support.
This part is cataloged in the Federal Logistics Information System (FLIS) under NSN 5961-01-100-8577, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.
Verify compatibility with your specific system configuration before ordering.
| mounting_method | TERMINAL |
| terminal_length | 1.500 INCHES MINIMUM IN |
| special_features | LEADS TO BE LAP-WELDED; JUNCTION PATTERN ARRANGEMENT: NPN |
| features_provided | HERMETICALLY SEALED CASE |
| internal_configuration | JUNCTION CONTACT |
| semiconductor_material | SILICON |
| terminal_type_and_quantity | 3 UNINSULATED WIRE LEAD |
| power_rating_per_characteristic | 1.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION |
| current_rating_per_characteristic | 1.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC AND 200.00 MILLIAMPERES MAXIMUM BASE CURRENT, DC |
| voltage_rating_in_volts_per_characteristic | 60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 7.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN AND 60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN |
| maximum_operating_temp_per_measurement_point | 200.0 CELSIUS JUNCTION DEGC |
| NSN | 5961-01-100-8577 |
| TERMINAL LENGTH | 1.500 INCHES MINIMUM IN |
| TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 7.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN AND 60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN |
| SEMICONDUCTOR MATERIAL | SILICON |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 CELSIUS JUNCTION DEGC |
| INTERNAL CONFIGURATION | JUNCTION CONTACT |
| MOUNTING METHOD | TERMINAL |
| SPECIAL FEATURES | LEADS TO BE LAP-WELDED; JUNCTION PATTERN ARRANGEMENT: NPN |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| POWER RATING PER CHARACTERISTIC | 1.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION |