6096925-1 — SEMICONDUCTOR DEVICES,UNITIZED

✓ Government record, cited

— · SFP TRANSCEIVER

PRODUCT OVERVIEW

6096925-1: SEMICONDUCTOR DEVICES,UNITIZED.

The SEMICONDUCTOR DEVICES,UNITIZED is a the manufacturer industrial component. Key specifications include overall_height: 0.225 INCHES MAXIMUM IN, overall_length: 1.573 INCHES MAXIMUM IN, mounting_method: UNTHREADED HOLE(S), features_provided: BURN IN AND GOLD PLATED LEADS, precious_material: GOLD, semiconductor_material: SILICON ALL TRANSISTOR. This part is cataloged in the U.S.

Government catalog under NSN 5961-01-007-5585, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS

6096925-1

NSN: 5961-01-007-5585
FSC: 5961 — Semiconductor Devices and Associated Hardware
CAGE: 03640 — LOCKHEED MARTIN CORPORATION DIV ROTARY AND MISSION SYSTEMS (USA)

SPECIFICATIONS

overall_height	0.225 INCHES MAXIMUM IN
overall_length	1.573 INCHES MAXIMUM IN
mounting_method	UNTHREADED HOLE(S)
features_provided	BURN IN AND GOLD PLATED LEADS
precious_material	GOLD
semiconductor_material	SILICON ALL TRANSISTOR
mounting_facility_quantity	2
terminal_type_and_quantity	8 PIN
component_name_and_quantity	2 TRANSISTOR
precious_material_and_location	LEADS GOLD
power_rating_per_characteristic	50.0 WATTS MAXIMUM TOTAL POWER DISSIPATION ALL TRANSISTOR
current_rating_per_characteristic	10.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC ALL TRANSISTOR
NSN	5961-01-007-5585

COMPONENT DIAGRAM

KEY FEATURES

•

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -80.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND -80.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, WITH SPECIFIED RESISTANCE BETWEEN BASE AND EMITTER AND 8.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN ALL TRANSISTOR

•

MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 CELSIUS CASE AND 175.0 CELSIUS JUNCTION DEGC

•

MOUNTING FACILITY QUANTITY: 2

•

JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-3

•

PRECIOUS MATERIAL: GOLD

•

MOUNTING METHOD: UNTHREADED HOLE(S)

•

SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR

TECHNICAL CHARACTERISTICS

OVERALL HEIGHT	0.225 INCHES MAXIMUM IN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC	-80.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND -80.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, WITH SPECIFIED RESISTANCE BETWEEN BASE AND EMITTER AND 8.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN ALL TRANSISTOR
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT	150.0 CELSIUS CASE AND 175.0 CELSIUS JUNCTION DEGC
MOUNTING FACILITY QUANTITY	2
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION	TO-3
PRECIOUS MATERIAL	GOLD
MOUNTING METHOD	UNTHREADED HOLE(S)
SEMICONDUCTOR MATERIAL	SILICON ALL TRANSISTOR
OVERALL LENGTH	1.573 INCHES MAXIMUM IN
COMPONENT NAME AND QUANTITY	2 TRANSISTOR

OTHER ITEMS IN FSC 5961 — Semiconductor Devices and Associated Hardware

Items in the same Federal Supply class. No interchangeability or substitution relationship is implied.

5961-00-000-0150 5961-00-000-4541 5961-00-000-5400 5961-00-000-7614 5961-00-000-8760 5961-00-001-1352 5961-00-001-2624 5961-00-001-2978

SUBSTITUTES & CROSS-REFERENCES 1

YY0026Same NSN cross-reference

Same NSN cross-reference

Also cataloged under this NSN

LIFECYCLE

NSN statusActive· U.S. Government catalog

Acquisition advice: Normally procured from the manufacturer (OEM)No demilitarization required

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FREQUENTLY ASKED QUESTIONS

What is 6096925-1?

6096925-1 is a SEMICONDUCTOR DEVICES,UNITIZED.

What parts can replace 6096925-1?

There is 1 known substitute for 6096925-1: YY0026. Substitute compatibility should be verified for your specific system.

What is the NSN for 6096925-1?

6096925-1 is cataloged in the U.S. Government catalog under NSN 5961-01-007-5585. This indicates validated use in U.S. government and defense supply chains.

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6096925-1 — SEMICONDUCTOR DEVICES,UNITIZED

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