6086906-114 — MICROCIRCUIT,MEMORY

✓ Government record, cited

— · COMPONENT

PRODUCT OVERVIEW

6086906-114: MICROCIRCUIT,MEMORY.

The MICROCIRCUIT,MEMORY is a the manufacturer memory module engineered for enterprise server and workstation platforms requiring validated, high-reliability memory. Key specifications include features_provided: BURN IN AND ELECTROSTATIC SENSITIVE AND MONOLITHIC AND PROGRAMMED, output_logic_form: TRANSISTOR-TRANSISTOR LOGIC, inclosure_material: CERAMIC, memory_device_type: PROM, storage_temp_range: -65.0 TO 150.0 CELSIUS DEGC, operating_temp_range: -55.0 TO 125.0 CELSIUS DEGC. This part is cataloged in the U.S.

Government catalog under NSN 5962-01-232-3472, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS

6086906-114

NSN: 5962-01-232-3472
FSC: 5962 — Microcircuits, Electronic
CAGE: 03640 — LOCKHEED MARTIN CORPORATION DIV ROTARY AND MISSION SYSTEMS (USA)

SPECIFICATIONS

features_provided	BURN IN AND ELECTROSTATIC SENSITIVE AND MONOLITHIC AND PROGRAMMED
output_logic_form	TRANSISTOR-TRANSISTOR LOGIC
inclosure_material	CERAMIC
memory_device_type	PROM
storage_temp_range	-65.0 TO 150.0 CELSIUS DEGC
operating_temp_range	-55.0 TO 125.0 CELSIUS DEGC
inclosure_configuration	DUAL-IN-LINE
terminal_surface_treatment	SOLDER
voltage_rating_and_type_per_characteristic	7.0 VOLTS MAXIMUM POWER SOURCE
NSN	5962-01-232-3472

COMPONENT DIAGRAM

KEY FEATURES

•

INCLOSURE MATERIAL: CERAMIC

•

TERMINAL SURFACE TREATMENT: SOLDER

•

FEATURES PROVIDED: BURN IN AND ELECTROSTATIC SENSITIVE AND MONOLITHIC AND PROGRAMMED

•

INCLOSURE CONFIGURATION: DUAL-IN-LINE

•

MEMORY DEVICE TYPE: PROM

•

STORAGE TEMP RANGE: -65.0 TO 150.0 CELSIUS DEGC

•

OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC

•

VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

TYPICAL APPLICATIONS

Server memory expansion for virtualization workloads
Database performance optimization (in-memory computing)
VDI and remote desktop session hosting
High-performance computing (HPC) clusters
Mail server and collaboration platform scaling
Application server tier expansion

TECHNICAL CHARACTERISTICS

INCLOSURE MATERIAL	CERAMIC
TERMINAL SURFACE TREATMENT	SOLDER
FEATURES PROVIDED	BURN IN AND ELECTROSTATIC SENSITIVE AND MONOLITHIC AND PROGRAMMED
INCLOSURE CONFIGURATION	DUAL-IN-LINE
MEMORY DEVICE TYPE	PROM
STORAGE TEMP RANGE	-65.0 TO 150.0 CELSIUS DEGC
OUTPUT LOGIC FORM	TRANSISTOR-TRANSISTOR LOGIC
VOLTAGE RATING AND TYPE PER CHARACTERISTIC	7.0 VOLTS MAXIMUM POWER SOURCE
OPERATING TEMP RANGE	-55.0 TO 125.0 CELSIUS DEGC
TERMINAL TYPE AND QUANTITY	18 PRINTED CIRCUIT

SUBSTITUTES & CROSS-REFERENCES 3

6086826-1Reference document

Same NSN cross-reference

Reference document — Secondary reference

2834849Reference document

Same NSN cross-reference

Reference document — Secondary reference

ROM/PROM FAMILY 007Reference document

Same NSN cross-reference

Reference document — Secondary reference

LIFECYCLE

NSN statusActive· U.S. Government catalog

Acquisition advice: Insurance item — stocked against contingency demandDemilitarization required — critical (Q)

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FREQUENTLY ASKED QUESTIONS

What is 6086906-114?

6086906-114 is a MICROCIRCUIT,MEMORY.

What parts can replace 6086906-114?

There are 3 known substitutes for 6086906-114: 6086826-1, 2834849, ROM/PROM FAMILY 007. Substitute compatibility should be verified for your specific system.

What is the NSN for 6086906-114?

6086906-114 is cataloged in the U.S. Government catalog under NSN 5962-01-232-3472. This indicates validated use in U.S. government and defense supply chains.

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