60511257-1 — SEMICONDUCTOR DEVICE,THYRISTOR

✓ Government record, cited

— · SFP TRANSCEIVER

PRODUCT OVERVIEW

60511257-1: SEMICONDUCTOR DEVICE,THYRISTOR.

The SEMICONDUCTOR DEVICE,THYRISTOR is a the manufacturer industrial component. Key specifications include overall_length: 0.180 INCHES MAXIMUM IN, mounting_method: TERMINAL, terminal_length: 1.015 INCHES MAXIMUM IN, overall_diameter: 0.366 INCHES MAXIMUM IN, special_features: JUNCTION PATTERN ARRANGEMENT: PNPN, features_provided: HERMETICALLY SEALED CASE AND ELECTROSTATIC SENSITIVE. This part is cataloged in the U.S.

Government catalog under NSN 5961-01-307-7191, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS

60511257-1

NSN: 5961-01-307-7191
FSC: 5961 — Semiconductor Devices and Associated Hardware
CAGE: 31338 — SEMITRONICS CORP (USA)

SPECIFICATIONS

overall_length	0.180 INCHES MAXIMUM IN
mounting_method	TERMINAL
terminal_length	1.015 INCHES MAXIMUM IN
overall_diameter	0.366 INCHES MAXIMUM IN
special_features	JUNCTION PATTERN ARRANGEMENT: PNPN
features_provided	HERMETICALLY SEALED CASE AND ELECTROSTATIC SENSITIVE
internal_configuration	JUNCTION CONTACT
semiconductor_material	SILICON
terminal_circle_diameter	0.210 INCHES MAXIMUM IN
terminal_type_and_quantity	3 UNINSULATED WIRE LEAD
power_rating_per_characteristic	40.0 WATTS MAXIMUM PEAK GATE POWER DISSIPATION
current_rating_per_characteristic	100.00 AMPERES MAXIMUM PEAK ON-STATE CURRENT, NONREPETITIVE
NSN	5961-01-307-7191

COMPONENT DIAGRAM

KEY FEATURES

•

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 700.0 MAXIMUM NONREPETITIVE PEAK REVERSE VOLTAGE AND 700.0 MAXIMUM NONREPETITIVE PEAK OFF-STATE VOLTAGE AND 600.0 MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE

•

MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 CELSIUS CASE DEGC

•

OVERALL DIAMETER: 0.366 INCHES MAXIMUM IN

•

TERMINAL LENGTH: 1.015 INCHES MAXIMUM IN

•

MOUNTING METHOD: TERMINAL

•

SEMICONDUCTOR MATERIAL: SILICON

•

INTERNAL CONFIGURATION: JUNCTION CONTACT

TECHNICAL CHARACTERISTICS

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC	700.0 MAXIMUM NONREPETITIVE PEAK REVERSE VOLTAGE AND 700.0 MAXIMUM NONREPETITIVE PEAK OFF-STATE VOLTAGE AND 600.0 MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT	100.0 CELSIUS CASE DEGC
OVERALL DIAMETER	0.366 INCHES MAXIMUM IN
TERMINAL LENGTH	1.015 INCHES MAXIMUM IN
MOUNTING METHOD	TERMINAL
SEMICONDUCTOR MATERIAL	SILICON
OVERALL LENGTH	0.180 INCHES MAXIMUM IN
INTERNAL CONFIGURATION	JUNCTION CONTACT
FEATURES PROVIDED	HERMETICALLY SEALED CASE AND ELECTROSTATIC SENSITIVE
CURRENT RATING PER CHARACTERISTIC	100.00 AMPERES MAXIMUM PEAK ON-STATE CURRENT, NONREPETITIVE

SUBSTITUTES & CROSS-REFERENCES 3

72715Reference document

Same NSN cross-reference

Reference document — Secondary reference

11200008-1Reference document

Same NSN cross-reference

Reference document — Vendor item drawing reference

S2600MReference document

Same NSN cross-reference

Reference document — Secondary reference

LIFECYCLE

NSN statusActive· U.S. Government catalog

Acquisition advice: Insurance item — stocked against contingency demandNo demilitarization required

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FREQUENTLY ASKED QUESTIONS

What is 60511257-1?

60511257-1 is a SEMICONDUCTOR DEVICE,THYRISTOR.

What parts can replace 60511257-1?

There are 3 known substitutes for 60511257-1: 72715, 11200008-1, S2600M. Substitute compatibility should be verified for your specific system.

What is the NSN for 60511257-1?

60511257-1 is cataloged in the U.S. Government catalog under NSN 5961-01-307-7191. This indicates validated use in U.S. government and defense supply chains.

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60511257-1 — SEMICONDUCTOR DEVICE,THYRISTOR

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