6012992-001: LIGHT EMITTING DIODE.
The LIGHT EMITTING DIODE is a the manufacturer industrial component. Key specifications include overall_length: 28.3 MILLIMETERS NOMINAL MM, overall_diameter: 3.1 MILLIMETERS NOMINAL MM, luminous_intensity: 10.4 MILLICANDELA NOMINAL, semiconductor_material: GALLIUM ARSENIDE PHOSPHIDE, end_item_identification: R-IAIS, terminal_type_and_quantity: 2 UNINSULATED WIRE LEAD. This part is cataloged in the U.S.
Government catalog under NSN 5980-01-536-6289, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.
Verify compatibility with your specific system configuration before ordering.
| overall_length | 28.3 MILLIMETERS NOMINAL MM |
| overall_diameter | 3.1 MILLIMETERS NOMINAL MM |
| luminous_intensity | 10.4 MILLICANDELA NOMINAL |
| semiconductor_material | GALLIUM ARSENIDE PHOSPHIDE |
| end_item_identification | R-IAIS |
| terminal_type_and_quantity | 2 UNINSULATED WIRE LEAD |
| function_for_which_designed | VISIBLE LIGHT EMITTING |
| color_tone_produced_per_source | RED SEMICONDUCTOR |
| current_rating_per_characteristic | 20.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, MAXIMUM PEAK TOTAL VALUE |
| voltage_rating_in_volts_per_characteristic | 2.1 NOMINAL FORWARD VOLTAGE, DC |
| NSN | 5980-01-536-6289 |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 2.1 NOMINAL FORWARD VOLTAGE, DC |
| OVERALL DIAMETER | 3.1 MILLIMETERS NOMINAL MM |
| SEMICONDUCTOR MATERIAL | GALLIUM ARSENIDE PHOSPHIDE |
| LUMINOUS INTENSITY | 10.4 MILLICANDELA NOMINAL |
| OVERALL LENGTH | 28.3 MILLIMETERS NOMINAL MM |
| CURRENT RATING PER CHARACTERISTIC | 20.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, MAXIMUM PEAK TOTAL VALUE |
| FUNCTION FOR WHICH DESIGNED | VISIBLE LIGHT EMITTING |
| END ITEM IDENTIFICATION | R-IAIS |
| TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| COLOR TONE PRODUCED PER SOURCE | RED SEMICONDUCTOR |