5R4818-009-0038: SEMICONDUCTOR DEVICE,DIODE.
The SEMICONDUCTOR DEVICE,DIODE is a the manufacturer industrial component. Key specifications include material: SILICON SEMICONDUCTOR, overall_length: 0.293 INCHES MINIMUM AND 0.357 INCHES MAXIMUM IN, mounting_method: TERMINAL, terminal_length: 1.000 INCHES MINIMUM IN, overall_diameter: 0.215 INCHES MINIMUM AND 0.235 INCHES MAXIMUM IN, features_provided: RADIATION HARDENED. This part is cataloged in the U.S.
Government catalog under NSN 5961-01-332-9941, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.
Verify compatibility with your specific system configuration before ordering.
| material | SILICON SEMICONDUCTOR |
| overall_length | 0.293 INCHES MINIMUM AND 0.357 INCHES MAXIMUM IN |
| mounting_method | TERMINAL |
| terminal_length | 1.000 INCHES MINIMUM IN |
| overall_diameter | 0.215 INCHES MINIMUM AND 0.235 INCHES MAXIMUM IN |
| features_provided | RADIATION HARDENED |
| terminal_type_and_quantity | 2 UNINSULATED WIRE LEAD |
| function_for_which_designed | TRANSIENT SUPPRESSOR |
| power_rating_per_characteristic | 1.0 WATTS MAXIMUM REVERSE POWER DISSIPATION, DC |
| current_rating_per_characteristic | 300.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC AND 200.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT |
| voltage_rating_in_volts_per_characteristic | 6.0 MINIMUM BREAKDOWN VOLTAGE, DC AND 6.75 MAXIMUM BREAKDOWN VOLTAGE, DC |
| maximum_operating_temp_per_measurement_point | 175.0 CELSIUS AMBIENT AIR DEGC |
| NSN | 5961-01-332-9941 |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 6.0 MINIMUM BREAKDOWN VOLTAGE, DC AND 6.75 MAXIMUM BREAKDOWN VOLTAGE, DC |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 175.0 CELSIUS AMBIENT AIR DEGC |
| OVERALL DIAMETER | 0.215 INCHES MINIMUM AND 0.235 INCHES MAXIMUM IN |
| TERMINAL LENGTH | 1.000 INCHES MINIMUM IN |
| MOUNTING METHOD | TERMINAL |
| OVERALL LENGTH | 0.293 INCHES MINIMUM AND 0.357 INCHES MAXIMUM IN |
| FEATURES PROVIDED | RADIATION HARDENED |
| CURRENT RATING PER CHARACTERISTIC | 300.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC AND 200.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT |
| FUNCTION FOR WHICH DESIGNED | TRANSIENT SUPPRESSOR |
| MATERIAL | SILICON SEMICONDUCTOR |