5L.5532.102.39 — SEMICONDUCTOR DEVICE,DIODE

✓ Government record, cited

— · SFP TRANSCEIVER

PRODUCT OVERVIEW

5L.5532.102.39: SEMICONDUCTOR DEVICE,DIODE.

The SEMICONDUCTOR DEVICE,DIODE is a the manufacturer industrial component. Key specifications include material: SILICON SEMICONDUCTOR, overall_length: 0.160 INCHES NOMINAL IN, mounting_method: TERMINAL, overall_diameter: 0.072 INCHES NOMINAL IN, features_provided: HERMETICALLY SEALED CASE, terminal_type_and_quantity: 2 UNINSULATED WIRE LEAD. This part is cataloged in the U.S.

Government catalog under NSN 5961-00-008-6989, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS

5L.5532.102.39

NSN: 5961-00-008-6989
FSC: 5961 — Semiconductor Devices and Associated Hardware
CAGE: D1901 — HENSOLDT SENSORS GMBH DIV SEPS (DEU)

SPECIFICATIONS

material	SILICON SEMICONDUCTOR
overall_length	0.160 INCHES NOMINAL IN
mounting_method	TERMINAL
overall_diameter	0.072 INCHES NOMINAL IN
features_provided	HERMETICALLY SEALED CASE
terminal_type_and_quantity	2 UNINSULATED WIRE LEAD
power_rating_per_characteristic	0.3 WATTS MAXIMUM TOTAL POWER DISSIPATION
voltage_rating_in_volts_per_characteristic	150.0 MAXIMUM REVERSE VOLTAGE, DC
maximum_operating_temp_per_measurement_point	150.0 CELSIUS JUNCTION DEGC
NSN	5961-00-008-6989

COMPONENT DIAGRAM

KEY FEATURES

•

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 150.0 MAXIMUM REVERSE VOLTAGE, DC

•

MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 CELSIUS JUNCTION DEGC

•

OVERALL DIAMETER: 0.072 INCHES NOMINAL IN

•

MOUNTING METHOD: TERMINAL

•

FEATURES PROVIDED: HERMETICALLY SEALED CASE

•

MATERIAL: SILICON SEMICONDUCTOR

TECHNICAL CHARACTERISTICS

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC	150.0 MAXIMUM REVERSE VOLTAGE, DC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT	150.0 CELSIUS JUNCTION DEGC
OVERALL DIAMETER	0.072 INCHES NOMINAL IN
MOUNTING METHOD	TERMINAL
OVERALL LENGTH	0.160 INCHES NOMINAL IN
FEATURES PROVIDED	HERMETICALLY SEALED CASE
MATERIAL	SILICON SEMICONDUCTOR
MATERIAL	GLASS ENCLOSURE
TERMINAL TYPE AND QUANTITY	2 UNINSULATED WIRE LEAD
POWER RATING PER CHARACTERISTIC	0.3 WATTS MAXIMUM TOTAL POWER DISSIPATION

OTHER ITEMS IN FSC 5961 — Semiconductor Devices and Associated Hardware

Items in the same Federal Supply class. No interchangeability or substitution relationship is implied.

5961-00-000-0150 5961-00-000-4541 5961-00-000-5400 5961-00-000-7614 5961-00-000-8760 5961-00-001-1352 5961-00-001-2624 5961-00-001-2978

SUBSTITUTES & CROSS-REFERENCES 2

HP5082-3001Reference document

Same NSN cross-reference

Reference document — Secondary reference

649A831H01Reference document

Same NSN cross-reference

Reference document — Secondary reference

LIFECYCLE

NSN statusActive· U.S. Government catalog

No demilitarization required

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FREQUENTLY ASKED QUESTIONS

What is 5L.5532.102.39?

5L.5532.102.39 is a SEMICONDUCTOR DEVICE,DIODE.

What parts can replace 5L.5532.102.39?

There are 2 known substitutes for 5L.5532.102.39: HP5082-3001, 649A831H01. Substitute compatibility should be verified for your specific system.

What is the NSN for 5L.5532.102.39?

5L.5532.102.39 is cataloged in the U.S. Government catalog under NSN 5961-00-008-6989. This indicates validated use in U.S. government and defense supply chains.

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5L.5532.102.39 — SEMICONDUCTOR DEVICE,DIODE

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