5E4860/911-0001 — TRANSISTOR

✓ Government record, cited

— · SFP TRANSCEIVER

PRODUCT OVERVIEW

5E4860/911-0001: TRANSISTOR.

The TRANSISTOR is a the manufacturer industrial component. Key specifications include overall_width: 1.050 INCHES MAXIMUM IN, overall_height: 0.450 INCHES MAXIMUM IN, overall_length: 1.527 INCHES MAXIMUM IN, mounting_method: UNTHREADED HOLE(S), features_provided: HERMETICALLY SEALED CASE, internal_configuration: FIELD EFFECT. This part is cataloged in the U.S.

Government catalog under NSN 5961-01-259-6447, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS

5E4860/911-0001

NSN: 5961-01-259-6447
FSC: 5961 — Semiconductor Devices and Associated Hardware
CAGE: 73030 — HAMILTON SUNDSTRAND CORPORATION DBA COLLINS AEROSPACE (USA)

SPECIFICATIONS

overall_width	1.050 INCHES MAXIMUM IN
overall_height	0.450 INCHES MAXIMUM IN
overall_length	1.527 INCHES MAXIMUM IN
mounting_method	UNTHREADED HOLE(S)
features_provided	HERMETICALLY SEALED CASE
internal_configuration	FIELD EFFECT
semiconductor_material	SILICON
mounting_facility_quantity	2
terminal_type_and_quantity	2 PIN AND 1 CASE
power_rating_per_characteristic	40.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
current_rating_per_characteristic	12.00 AMPERES MAXIMUM DRAIN CURRENT
voltage_rating_in_volts_per_characteristic	400.0 MAXIMUM BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE AND 400.0 MAXIMUM DRAIN TO GATE VOLTAGE
NSN	5961-01-259-6447

COMPONENT DIAGRAM

KEY FEATURES

•

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE AND 400.0 MAXIMUM DRAIN TO GATE VOLTAGE

•

MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 CELSIUS JUNCTION DEGC

•

MOUNTING FACILITY QUANTITY: 2

•

JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-3

•

MOUNTING METHOD: UNTHREADED HOLE(S)

•

SEMICONDUCTOR MATERIAL: SILICON

TECHNICAL CHARACTERISTICS

OVERALL HEIGHT	0.450 INCHES MAXIMUM IN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC	400.0 MAXIMUM BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE AND 400.0 MAXIMUM DRAIN TO GATE VOLTAGE
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT	150.0 CELSIUS JUNCTION DEGC
MOUNTING FACILITY QUANTITY	2
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION	TO-3
MOUNTING METHOD	UNTHREADED HOLE(S)
SEMICONDUCTOR MATERIAL	SILICON
OVERALL LENGTH	1.527 INCHES MAXIMUM IN
INTERNAL CONFIGURATION	FIELD EFFECT
OVERALL WIDTH	1.050 INCHES MAXIMUM IN

OTHER ITEMS IN FSC 5961 — Semiconductor Devices and Associated Hardware

Items in the same Federal Supply class. No interchangeability or substitution relationship is implied.

5961-00-000-0150 5961-00-000-4541 5961-00-000-5400 5961-00-000-7614 5961-00-000-8760 5961-00-001-1352 5961-00-001-2624 5961-00-001-2978

SUBSTITUTES & CROSS-REFERENCES 1

IRF320Reference document

Same NSN cross-reference

Reference document — Secondary reference

LIFECYCLE

NSN statusActive· U.S. Government catalog

Acquisition advice: Terminal item — no further procurement; issued until stock is exhaustedNo demilitarization required

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FREQUENTLY ASKED QUESTIONS

What is 5E4860/911-0001?

5E4860/911-0001 is a TRANSISTOR.

What parts can replace 5E4860/911-0001?

There is 1 known substitute for 5E4860/911-0001: IRF320. Substitute compatibility should be verified for your specific system.

What is the NSN for 5E4860/911-0001?

5E4860/911-0001 is cataloged in the U.S. Government catalog under NSN 5961-01-259-6447. This indicates validated use in U.S. government and defense supply chains.

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