5E4810/08-0005 — SEMICONDUCTOR DEVICE,DIODE

✓ Government record, cited

— · SFP TRANSCEIVER

PRODUCT OVERVIEW

5E4810/08-0005: SEMICONDUCTOR DEVICE,DIODE.

The SEMICONDUCTOR DEVICE,DIODE is a the manufacturer industrial component. Key specifications include material: SILICON SEMICONDUCTOR, overall_length: 0.260 INCHES MAXIMUM IN, mounting_method: TERMINAL, terminal_length: 0.900 INCHES MINIMUM IN, overall_diameter: 0.180 INCHES MAXIMUM IN, features_provided: HERMETICALLY SEALED CASE. This part is cataloged in the U.S.

Government catalog under NSN 5961-01-221-0811, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS

5E4810/08-0005

NSN: 5961-01-221-0811
FSC: 5961 — Semiconductor Devices and Associated Hardware
CAGE: 73030 — HAMILTON SUNDSTRAND CORPORATION DBA COLLINS AEROSPACE (USA)

SPECIFICATIONS

material	SILICON SEMICONDUCTOR
overall_length	0.260 INCHES MAXIMUM IN
mounting_method	TERMINAL
terminal_length	0.900 INCHES MINIMUM IN
overall_diameter	0.180 INCHES MAXIMUM IN
features_provided	HERMETICALLY SEALED CASE
terminal_type_and_quantity	2 UNINSULATED WIRE LEAD
current_rating_per_characteristic	3.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 80.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
voltage_rating_in_volts_per_characteristic	500.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS AND 500.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE
maximum_operating_temp_per_measurement_point	175.0 CELSIUS AMBIENT AIR DEGC
NSN	5961-01-221-0811

COMPONENT DIAGRAM

KEY FEATURES

•

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 500.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS AND 500.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE

•

MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 CELSIUS AMBIENT AIR DEGC

•

OVERALL DIAMETER: 0.180 INCHES MAXIMUM IN

•

TERMINAL LENGTH: 0.900 INCHES MINIMUM IN

•

MOUNTING METHOD: TERMINAL

•

FEATURES PROVIDED: HERMETICALLY SEALED CASE

•

CURRENT RATING PER CHARACTERISTIC: 3.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 80.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT

TECHNICAL CHARACTERISTICS

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC	500.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS AND 500.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT	175.0 CELSIUS AMBIENT AIR DEGC
OVERALL DIAMETER	0.180 INCHES MAXIMUM IN
TERMINAL LENGTH	0.900 INCHES MINIMUM IN
MOUNTING METHOD	TERMINAL
OVERALL LENGTH	0.260 INCHES MAXIMUM IN
FEATURES PROVIDED	HERMETICALLY SEALED CASE
CURRENT RATING PER CHARACTERISTIC	3.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 80.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
MATERIAL	SILICON SEMICONDUCTOR
MATERIAL	GLASS ENCLOSURE

SUBSTITUTES & CROSS-REFERENCES 1

JANTX1N5419Reference document

Same NSN cross-reference

Reference document — Secondary reference

LIFECYCLE

NSN statusActive· U.S. Government catalog

No demilitarization required

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FREQUENTLY ASKED QUESTIONS

What is 5E4810/08-0005?

5E4810/08-0005 is a SEMICONDUCTOR DEVICE,DIODE.

What parts can replace 5E4810/08-0005?

There is 1 known substitute for 5E4810/08-0005: JANTX1N5419. Substitute compatibility should be verified for your specific system.

What is the NSN for 5E4810/08-0005?

5E4810/08-0005 is cataloged in the U.S. Government catalog under NSN 5961-01-221-0811. This indicates validated use in U.S. government and defense supply chains.

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