5962-9451003MXA: MICROCIRCUIT,MEMORY.
The MICROCIRCUIT,MEMORY is a the manufacturer memory module engineered for enterprise server and workstation platforms requiring validated, high-reliability memory. Key specifications include features_provided: ELECTROSTATIC SENSITIVE AND MONOLITHIC AND PROGRAMMABLE AND ULTRAVIOLET ERASABLE, output_logic_form: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC, inclosure_material: CERAMIC AND GLASS, memory_device_type: EPROM, storage_temp_range: -65.0 TO 150.0 CELSIUS DEGC, test_data_document: 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.).. This part is cataloged in the U.S.
Government catalog under NSN 5962-01-468-5930, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.
Verify compatibility with your specific system configuration before ordering.
| special_features | GENERIC P/N 7C335, CIRCUIT FUNCTION-12 MACROCELL EPLD, FMAX3-83 MHZ, DATA RETENTION-10 YEARS MINIMUM, ENDURANCE-25 ERASE/WRITE CYCLES MINIMUM MHz |
| features_provided | ELECTROSTATIC SENSITIVE AND MONOLITHIC AND PROGRAMMABLE AND ULTRAVIOLET ERASABLE |
| output_logic_form | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
| inclosure_material | CERAMIC AND GLASS |
| memory_device_type | EPROM |
| storage_temp_range | -65.0 TO 150.0 CELSIUS DEGC |
| test_data_document | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
| operating_temp_range | -55.0 TO 125.0 CELSIUS DEGC |
| inclosure_configuration | DUAL-IN-LINE |
| maximum_power_dissipation_rating | 1.1 WATTS |
| part_name_assigned_by_controlling_agency | MICROCIRCUIT, MEMORY, DIGITAL, CMOS UV ERASABLE PROGRAMMABLE LOGIC ARRAY, MONOLITHIC SILICON |
| voltage_rating_and_type_per_characteristic | -0.5 VOLTS MINIMUM INPUT AND 7.0 VOLTS MAXIMUM INPUT |
| NSN | 5962-01-468-5930 |
| INCLOSURE MATERIAL | CERAMIC AND GLASS |
| FEATURES PROVIDED | ELECTROSTATIC SENSITIVE AND MONOLITHIC AND PROGRAMMABLE AND ULTRAVIOLET ERASABLE |
| INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| MEMORY DEVICE TYPE | EPROM |
| STORAGE TEMP RANGE | -65.0 TO 150.0 CELSIUS DEGC |
| OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
| SPECIAL FEATURES | GENERIC P/N 7C335, CIRCUIT FUNCTION-12 MACROCELL EPLD, FMAX3-83 MHZ, DATA RETENTION-10 YEARS MINIMUM, ENDURANCE-25 ERASE/WRITE CYCLES MINIMUM MHz |
| VOLTAGE RATING AND TYPE PER CHARACTERISTIC | -0.5 VOLTS MINIMUM INPUT AND 7.0 VOLTS MAXIMUM INPUT |
| OPERATING TEMP RANGE | -55.0 TO 125.0 CELSIUS DEGC |
| PART NAME ASSIGNED BY CONTROLLING AGENCY | MICROCIRCUIT, MEMORY, DIGITAL, CMOS UV ERASABLE PROGRAMMABLE LOGIC ARRAY, MONOLITHIC SILICON |