5962-3829410MXB: MICROCIRCUIT,MEMORY.
The MICROCIRCUIT,MEMORY is a the manufacturer memory module engineered for enterprise server and workstation platforms requiring validated, high-reliability memory. Key specifications include special_features: DATA RETENTION - YES/ACCESS TIME - 45 NS NS, features_provided: MONOLITHIC, output_logic_form: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC, inclosure_material: CERAMIC AND GLASS, memory_device_type: RAM, storage_temp_range: -65.0 TO 150.0 CELSIUS DEGC. This part is cataloged in the U.S.
Government catalog under NSN 5962-01-466-0645, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.
Verify compatibility with your specific system configuration before ordering.
| special_features | DATA RETENTION - YES/ACCESS TIME - 45 NS NS |
| features_provided | MONOLITHIC |
| output_logic_form | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
| inclosure_material | CERAMIC AND GLASS |
| memory_device_type | RAM |
| storage_temp_range | -65.0 TO 150.0 CELSIUS DEGC |
| test_data_document | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
| operating_temp_range | -55.0 TO 125.0 CELSIUS DEGC |
| end_item_identification | NUCLEAR POWER PLANTS |
| inclosure_configuration | DUAL-IN-LINE |
| maximum_power_dissipation_rating | 1.0 WATTS |
| part_name_assigned_by_controlling_agency | MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 8K X 8 STATIC RANDOM ACCESS MEMORY (SRAM), MONOLITHIC SILICON |
| NSN | 5962-01-466-0645 |
| INCLOSURE MATERIAL | CERAMIC AND GLASS |
| FEATURES PROVIDED | MONOLITHIC |
| INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| MEMORY DEVICE TYPE | RAM |
| STORAGE TEMP RANGE | -65.0 TO 150.0 CELSIUS DEGC |
| OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
| SPECIAL FEATURES | DATA RETENTION - YES/ACCESS TIME - 45 NS NS |
| VOLTAGE RATING AND TYPE PER CHARACTERISTIC | -0.5 VOLTS MINIMUM INPUT AND 7.0 VOLTS MAXIMUM INPUT |
| OPERATING TEMP RANGE | -55.0 TO 125.0 CELSIUS DEGC |
| PART NAME ASSIGNED BY CONTROLLING AGENCY | MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 8K X 8 STATIC RANDOM ACCESS MEMORY (SRAM), MONOLITHIC SILICON |