The Microcircuit,memory, cataloged under National Stock Number 5962-01-384-4865, is classified within Federal Supply Class 5962 (No Item Name Available) of the Electrical and Electronic Equipment Components group. The primary manufacturer of record is Raytheon Company Dba Raytheon Co. Government technical data includes 12 verified specifications, sourced from the Federal Logistics Information System (FLIS). This item has 5 commercial cross-references from 5 manufacturers, enabling identification through both NSN and commercial part number lookups. 4 verified substitutes exist in the FLIS interchangeability database. Current acquisition status: Active.
| Parameter | Value |
|---|---|
| NSN | 5962-01-384-4865 |
| Primary Part Number | G303767-2A |
| Item Name | Microcircuit,memory |
| FSC / FSG | 5962 / 59 — No Item Name Available |
| Manufacturer | Raytheon Company Dba Raytheon Co |
| Status | ACTIVE |
| Output Logic Form | TRANSISTOR-TRANSISTOR LOGIC |
| Terminal Type and Quantity | 24 PRINTED CIRCUIT |
| Voltage Rating and Type Per Characteristic | 12.0 VOLTS MAXIMUM POWER SOURCE |
| Storage Temp Range | -65.0 TO 150.0 CELSIUS DEGC |
| Inclosure Configuration | DUAL-IN-LINE |
| Test Data Document | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
| Terminal Surface Treatment | SOLDER |
| Memory Device Type | PAL |
| Features Provided | HERMETICALLY SEALED AND BURN IN AND MONOLITHIC AND ELECTROSTATIC SENSITIVE AND PROGRAMMED |
| Operating Temp Range | -55.0 TO 125.0 CELSIUS DEGC |
| Maximum Power Dissipation Rating | 1.2 WATTS |
| Inclosure Material | CERAMIC |
| Acquisition Status | ACTIVE |
| HAZMAT | No |
| Part Number | Manufacturer |
|---|---|
| G303767-2A | Raytheon Company Div Corp (USA) |
| G303767-2A | Raytheon Company (USA) |
| ROM/PROM | Dla Land and Maritime Dba Engineering and Technical Support Div Document Standardization Division (vendor Item Drawings) (USA) |
| M38510/50504BLA | Military Specifications Promulgated by Military Departments/agencies Under Authority of Defense Standardization Manual 4120 3-M |
| G303767-2A PRIMARY | Raytheon Company Dba Raytheon Co (USA) |
NSN 5962-01-384-4865 is a Microcircuit,memory, manufactured by Raytheon Company Dba Raytheon Co, classified under FSC 5962 (No Item Name Available). Status: active.
NSN 5962-01-384-4865 has 5 cross-referenced part numbers: G303767-2A (Raytheon Company Div Corp), G303767-2A (Raytheon Company), ROM/PROM (Dla Land and Maritime Dba Engineering and Technical Support Div Document Standardization Division (vendor Item Drawings)), M38510/50504BLA (Military Specifications Promulgated by Military Departments/agencies Under Authority of Defense Standardization Manual 4120 3-M), G303767-2A (Raytheon Company Dba Raytheon Co).
There are 4 known substitutes for 5962-01-384-4865: 5962-01-288-4200, 5962-01-342-0787, 5962-01-384-4896 and 1 more. Verify interchangeability with system specifications before substitution.
Key specifications for G303767-2A: Output Logic Form: TRANSISTOR-TRANSISTOR LOGIC; Terminal Type and Quantity: 24 PRINTED CIRCUIT; Voltage Rating and Type Per Characteristic: 12.0 VOLTS MAXIMUM POWER SOURCE; Storage Temp Range: -65.0 TO 150.0 CELSIUS DEGC. 12 total characteristics are documented in the Federal Logistics Information System.