The Microcircuit,memory, cataloged under National Stock Number 5962-01-377-1118, is classified within Federal Supply Class 5962 (No Item Name Available) of the Electrical and Electronic Equipment Components group. The primary manufacturer of record is Raytheon Company Div Rmd Strategic. Government technical data includes 11 verified specifications, sourced from the Federal Logistics Information System (FLIS). This item has 3 commercial cross-references from 2 manufacturers, enabling identification through both NSN and commercial part number lookups. 1 verified substitute exists in the FLIS interchangeability database. Current acquisition status: Active.
| Parameter | Value |
|---|---|
| NSN | 5962-01-377-1118 |
| Primary Part Number | 53167-1 |
| Item Name | Microcircuit,memory |
| FSC / FSG | 5962 / 59 — No Item Name Available |
| Manufacturer | Raytheon Company Div Rmd Strategic |
| Status | ACTIVE |
| Output Logic Form | N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC |
| Time Rating Per Chacteristic | 250.00 NANOSECONDS NOMINAL ACCESS NS |
| Memory Device Type | EPROM |
| Hybrid Technology Type | MONOLITHIC |
| Voltage Rating and Type Per Characteristic | -0.6 VOLTS MINIMUM ABSOLUTE INPUT AND 6.0 VOLTS MAXIMUM ABSOLUTE INPUT AND -0.6 VOLTS MINIMUM ABSOLUTE OUTPUT AND 6.0 VOLTS MAXIMUM ABSOLUTE OUTPUT |
| Test Data Document | 05869-726038-2 DRAWING (THIS IS THE BASIC GOVERNING DRAWING, SUCH AS A CONTRACTOR DRAWING, ORIGINAL EQUIPMENT MANUFACTURER DRAWING, ETC.; EXCLUDES ANY SPECIFICATION, STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRAWING) |
| Terminal Type and Quantity | 28 PRINTED CIRCUIT |
| Operating Temp Range | -10.0 TO 80.0 CELSIUS DEGC |
| Features Provided | PROGRAMMED AND TESTED TO MIL-STD-883 |
| Storage Temp Range | -65.0 TO 125.0 CELSIUS DEGC |
| Inclosure Configuration | DUAL-IN-LINE |
| Acquisition Status | ACTIVE |
| HAZMAT | No |
NSN 5962-01-377-1118 is a Microcircuit,memory, manufactured by Raytheon Company Div Rmd Strategic, classified under FSC 5962 (No Item Name Available). Status: active.
NSN 5962-01-377-1118 has 3 cross-referenced part numbers: 53167-1 (Raytheon Company Div Rmd Strategic), ROM/PROM (Dla Land and Maritime Dba Engineering and Technical Support Div Document Standardization Division (vendor Item Drawings)), 722959-50 (Raytheon Company Div Rmd Strategic).
There is 1 known substitute for 5962-01-377-1118: 9150-01-550-8528. Verify interchangeability with system specifications before substitution.
Key specifications for 53167-1: Output Logic Form: N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC; Part Name Assigned by Controlling Agency: MICROCIRCUIT DIGITAL 131072-BIT READ ONLY MEMORY (16384X8); Time Rating Per Chacteristic: 250.00 NANOSECONDS NOMINAL ACCESS NS; Memory Device Type: EPROM. 13 total characteristics are documented in the Federal Logistics Information System.