The Microcircuit,memory, cataloged under National Stock Number 5962-01-371-5391, is classified within Federal Supply Class 5962 (No Item Name Available) of the Electrical and Electronic Equipment Components group. The primary manufacturer of record is Raytheon Company Div Rmd Strategic. Government technical data includes 18 verified specifications, sourced from the Federal Logistics Information System (FLIS). This item has 3 commercial cross-references from 3 manufacturers, enabling identification through both NSN and commercial part number lookups. 9 verified substitutes exist in the FLIS interchangeability database. Current acquisition status: Active.
| Parameter | Value |
|---|---|
| NSN | 5962-01-371-5391 |
| Primary Part Number | 53219-1 |
| Item Name | Microcircuit,memory |
| FSC / FSG | 5962 / 59 — No Item Name Available |
| Manufacturer | Raytheon Company Div Rmd Strategic |
| Status | ACTIVE |
| Features Provided | BIPOLAR AND MONOLITHIC AND PROGRAMMED |
| Input Circuit Pattern | 16 INPUT |
| Operating Temp Range | -55.0 TO 125.0 CELSIUS DEGC |
| Inclosure Material | CERAMIC |
| Test Data Document | 81349-MIL-M-38510 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS, BROCHURES,ETC., THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS, INDUSTRY DIRECTORIES, AND SIMILAR TRADE PUBLICATIONS, REFLECTING GENERAL TYPE DATA ON CERTAIN ENVIRONMENTAL AND PERFORMANCE REQUIREMENTS AND TEST CONDITIONS THAT ARE SHOWN AS "TYPICAL", "AVERAGE", "NOMINAL", ETC.). AND 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
| Specification/standard Data | 81349--38510/50403BRX GOVERNMENT SPECIFICATION |
| Departure From Cited Designator | ALTERED BY PROGRAMMING,TESTING & MARKING |
| Purchase Description Identification | 05869-53219-1 |
| Terminal Type and Quantity | 20 PRINTED CIRCUIT |
| Current Rating Per Characteristic | 100.00 MILLIAMPERES MAXIMUM OUTPUT SINK |
| Inclosure Configuration | DUAL-IN-LINE |
| Storage Temp Range | -65.0 TO 150.0 CELSIUS DEGC |
| Maximum Power Dissipation Rating | 2.0 WATTS |
| Voltage Rating and Type Per Characteristic | -1.5 VOLTS MINIMUM ABSOLUTE INPUT AND 12.0 VOLTS MAXIMUM ABSOLUTE INPUT |
| Memory Device Type | PAL |
| Hybrid Technology Type | MONOLITHIC |
| Case Outline Source and Designator | D-8 MIL-M-38510 |
| Output Logic Form | BIPOLAR METAL-OXIDE SEMICONDUCTOR |
| Acquisition Status | ACTIVE |
| HAZMAT | No |
| Part Number | Manufacturer |
|---|---|
| ROM/PROM FAMILY 047 | Dla Land and Maritime Dba Engineering and Technical Support Div Document Standardization Division (vendor Item Drawings) (USA) |
| 53219-1 PRIMARY | Raytheon Company Div Rmd Strategic (USA) |
| M38510/50403BRX | Military Specifications Promulgated by Military Departments/agencies Under Authority of Defense Standardization Manual 4120 3-M |
NSN 5962-01-371-5391 is a Microcircuit,memory, manufactured by Raytheon Company Div Rmd Strategic, classified under FSC 5962 (No Item Name Available). Status: active.
NSN 5962-01-371-5391 has 3 cross-referenced part numbers: ROM/PROM FAMILY 047 (Dla Land and Maritime Dba Engineering and Technical Support Div Document Standardization Division (vendor Item Drawings)), 53219-1 (Raytheon Company Div Rmd Strategic), M38510/50403BRX (Military Specifications Promulgated by Military Departments/agencies Under Authority of Defense Standardization Manual 4120 3-M).
There are 9 known substitutes for 5962-01-371-5391: 5962-01-188-8742, 5962-01-254-6224, 5962-01-254-7858 and 6 more. Verify interchangeability with system specifications before substitution.
Key specifications for 53219-1: Features Provided: BIPOLAR AND MONOLITHIC AND PROGRAMMED; Input Circuit Pattern: 16 INPUT; Operating Temp Range: -55.0 TO 125.0 CELSIUS DEGC; Inclosure Material: CERAMIC. 20 total characteristics are documented in the Federal Logistics Information System.