The Microcircuit,memory, cataloged under National Stock Number 5962-01-351-4990, is classified within Federal Supply Class 5962 (No Item Name Available) of the Electrical and Electronic Equipment Components group. The primary manufacturer of record is Raytheon Company Dba Raytheon Co. Government technical data includes 19 verified specifications, sourced from the Federal Logistics Information System (FLIS). This item has 7 commercial cross-references from 5 manufacturers, enabling identification through both NSN and commercial part number lookups. 6 verified substitutes exist in the FLIS interchangeability database. Current acquisition status: Active.
| Parameter | Value |
|---|---|
| NSN | 5962-01-351-4990 |
| Primary Part Number | G435790-2 |
| Item Name | Microcircuit,memory |
| FSC / FSG | 5962 / 59 — No Item Name Available |
| Manufacturer | Raytheon Company Dba Raytheon Co |
| Status | ACTIVE |
| Features Provided | PROGRAMMED AND MONOLITHIC AND W/CLOCK AND BIDIRECTIONAL |
| Current Rating Per Characteristic | 185.00 MILLIAMPERES MAXIMUM SUPPLY |
| Body Width | 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM IN |
| Test Data Document | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
| Maximum Power Dissipation Rating | 2.0 WATTS |
| Time Rating Per Chacteristic | 45.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT AND 45.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT NS |
| Body Height | 0.130 INCHES MINIMUM AND 0.185 INCHES MAXIMUM IN |
| Body Length | 1.060 INCHES MAXIMUM IN |
| Inclosure Configuration | DUAL-IN-LINE |
| Terminal Surface Treatment | SOLDER |
| Case Outline Source and Designator | D-8 MIL-M-38510 |
| Voltage Rating and Type Per Characteristic | -0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE |
| Memory Device Type | PAL |
| Operating Temp Range | -55.0 TO 125.0 CELSIUS DEGC |
| Storage Temp Range | -65.0 TO 150.0 CELSIUS DEGC |
| Input Circuit Pattern | 16 INPUT |
| Terminal Type and Quantity | 20 PRINTED CIRCUIT |
| Inclosure Material | CERAMIC |
| Output Logic Form | TRANSISTOR-TRANSISTOR LOGIC |
| Acquisition Status | ACTIVE |
| HAZMAT | No |
| Part Number | Manufacturer |
|---|---|
| PRG435790-1 | Raytheon Company Dba Raytheon Co (USA) |
| ROM/PROM | Dla Land and Maritime Dba Engineering and Technical Support Div Document Standardization Division (vendor Item Drawings) (USA) |
| G435790-2 PRIMARY | Raytheon Company Dba Raytheon Co (USA) |
| G435790-2 | Raytheon Company (USA) |
| 8103601RA | Dla Land and Maritime Dba Engineering and Technical Support Div Document Standardization Division (standard Microcircuit (USA) |
| PRG435790-1 | Raytheon Company Div Corp (USA) |
| G435790-2 | Raytheon Company Div Corp (USA) |
NSN 5962-01-351-4990 is a Microcircuit,memory, manufactured by Raytheon Company Dba Raytheon Co, classified under FSC 5962 (No Item Name Available). Status: active.
NSN 5962-01-351-4990 has 7 cross-referenced part numbers: PRG435790-1 (Raytheon Company Dba Raytheon Co), ROM/PROM (Dla Land and Maritime Dba Engineering and Technical Support Div Document Standardization Division (vendor Item Drawings)), G435790-2 (Raytheon Company Dba Raytheon Co), G435790-2 (Raytheon Company), 8103601RA (Dla Land and Maritime Dba Engineering and Technical Support Div Document Standardization Division (standard Microcircuit) and 2 more.
There are 6 known substitutes for 5962-01-351-4990: 5962-01-351-4991, 5962-01-351-5737, 5962-01-351-9525 and 3 more. Verify interchangeability with system specifications before substitution.
Key specifications for G435790-2: Features Provided: PROGRAMMED AND MONOLITHIC AND W/CLOCK AND BIDIRECTIONAL; Current Rating Per Characteristic: 185.00 MILLIAMPERES MAXIMUM SUPPLY; Body Width: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM IN; Test Data Document: 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.).. 23 total characteristics are documented in the Federal Logistics Information System.