The Microcircuit,memory, cataloged under National Stock Number 5962-01-351-4989, is classified within Federal Supply Class 5962 (Microcircuits, Electronic) of the Electrical and Electronic Equipment Components group. The manufacturer of record is Raytheon Company Dba Raytheon Co. Government technical data includes 19 specifications, cited from the U.S. Government catalog. The record lists 2 manufacturer part numbers for this item, enabling identification through both NSN and commercial part number lookups. 5 additional reference documents (drawings, advisory and superseded references) are recorded in the U.S. Government catalog. Current acquisition status: Active.
| Parameter | Value |
|---|---|
| NSN | 5962-01-351-4989 |
| Primary Part Number | G437763-1 |
| Item Name | Microcircuit,memory |
| FSC / FSG | 5962 / 59 — Microcircuits, Electronic |
| Manufacturer | Raytheon Company Dba Raytheon Co |
| Status | ACTIVE |
| Input Circuit Pattern | 20 INPUT |
| Inclosure Material | CERAMIC |
| Terminal Surface Treatment | SOLDER |
| Body Width | 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM IN |
| Body Height | 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM IN |
| Features Provided | HIGH IMPEDANCE AND W/CLOCK AND PROGRAMMED AND BIPOLAR AND MONOLITHIC AND BIDIRECTIONAL |
| Inclosure Configuration | DUAL-IN-LINE |
| Current Rating Per Characteristic | 165.00 MILLIAMPERES MAXIMUM SUPPLY |
| Memory Device Type | PAL |
| Case Outline Source and Designator | D-9 MIL-M-38510 |
| Body Length | 1.280 INCHES MAXIMUM IN |
| Storage Temp Range | -65.0 TO 150.0 CELSIUS DEGC |
| Output Logic Form | TRANSISTOR-TRANSISTOR LOGIC |
| Voltage Rating and Type Per Characteristic | -0.5 VOLTS MINIMUM POWER SOURCE AND 12.0 VOLTS MAXIMUM POWER SOURCE |
| Operating Temp Range | -55.0 TO 125.0 CELSIUS DEGC |
| Test Data Document | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
| Terminal Type and Quantity | 24 PRINTED CIRCUIT |
| Maximum Power Dissipation Rating | 1.2 WATTS |
| Time Rating Per Chacteristic | 35.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT AND 35.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT NS |
| Acquisition Status | ACTIVE |
| DEMIL Code | DEMIL Q — CCL Item — Commerce Control List |
| Hazard | No hazard code in the DLA record (HMIC N) |
| Criticality Code | X |
| Part Number | Manufacturer |
|---|---|
| G437763-1 | Raytheon Company (USA) |
| G437763-1 PRIMARY | Raytheon Company Dba Raytheon Co (USA) |
| Reference | Meaning |
|---|---|
| G437763-1 | 5/9 Secondary reference Raytheon Company Div Corp |
| ROM/PROM | 5/1 Secondary reference Dla Land and Maritime Dba Engineering and Technical Support Div Document Standardization Division (vendor Item Drawings) |
| PRG437763-1 | 5/1 Secondary reference Raytheon Company Dba Raytheon Co |
| PRG437763-1 | 5/9 Secondary reference Raytheon Company Div Corp |
| 8412905LA | 5/1 Secondary reference Dla Land and Maritime Dba Engineering and Technical Support Div Document Standardization Division (standard Microcircuit |
NSN 5962-01-351-4989 is a Microcircuit,memory, manufactured by Raytheon Company Dba Raytheon Co, classified under FSC 5962, Microcircuits, Electronic. Status: active.
NSN 5962-01-351-4989 has 2 manufacturer part numbers on file: G437763-1 (Raytheon Company), G437763-1 (Raytheon Company Dba Raytheon Co).
Key specifications for G437763-1: Overall Height: 0.400 INCHES MAXIMUM IN; Input Circuit Pattern: 20 INPUT; Inclosure Material: CERAMIC; Terminal Surface Treatment: SOLDER. 19 specifications are documented in the U.S. Government catalog.
No hazard code in the DLA record (HMIC N). Hazard information on this page is shown exactly as it appears in the DLA record.
NSN 5962-01-351-4989 has DEMIL Code Q. Demilitarization may be required before disposal or transfer to non-military entities.
U.S. Government catalog: edition PUBLOGDVD v12.0.0 (OCT 2026), edition date 2026-10-01, retrieved 2026-10-16.
U.S. Government catalog: edition PUBLOGDVD v12.0.0 (OCT 2026), edition date 2026-10-01, retrieved 2026-10-18.