The Microcircuit,memory, cataloged under National Stock Number 5962-01-313-0662, is classified within Federal Supply Class 5962 (Microcircuits, Electronic) of the Electrical and Electronic Equipment Components group. The manufacturer of record is Raytheon E-Systems, Inc. Government technical data includes 19 specifications, cited from the U.S. Government catalog. The record lists 1 manufacturer part number for this item, enabling identification through both NSN and commercial part number lookups. 3 additional reference documents (drawings, advisory and superseded references) are recorded in the U.S. Government catalog. 1 item shares a part number with this NSN in the catalog (possible match — not a government interchangeability claim). Current acquisition status: Active.
| Parameter | Value |
|---|---|
| NSN | 5962-01-313-0662 |
| Primary Part Number | 85-49419-001 |
| Item Name | Microcircuit,memory |
| FSC / FSG | 5962 / 59 — Microcircuits, Electronic |
| Manufacturer | Raytheon E-Systems, Inc |
| Status | ACTIVE |
| Input Circuit Pattern | 25 INPUT |
| Inclosure Material | CERAMIC |
| Terminal Surface Treatment | SOLDER |
| Body Width | 0.245 INCHES MINIMUM AND 0.310 INCHES MAXIMUM IN |
| Body Height | 0.080 INCHES MINIMUM AND 0.160 INCHES MAXIMUM IN |
| Criticality Code Justification | FEAT |
| Features Provided | ELECTROSTATIC SENSITIVE AND HERMETICALLY SEALED AND STATIC OPERATION AND W/ENABLE |
| Inclosure Configuration | DUAL-IN-LINE |
| Memory Device Type | ROM |
| Body Length | 1.430 INCHES MINIMUM AND 1.485 INCHES MAXIMUM IN |
| Storage Temp Range | -65.0 TO 150.0 CELSIUS DEGC |
| Output Logic Form | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
| Voltage Rating and Type Per Characteristic | 7.0 VOLTS MAXIMUM POWER SOURCE |
| Operating Temp Range | -55.0 TO 125.0 CELSIUS DEGC |
| Test Data Document | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
| Terminal Type and Quantity | 28 PRINTED CIRCUIT |
| Maximum Power Dissipation Rating | 660.0 MILLIWATTS |
| Memory Capacity | UNKNOWN |
| Time Rating Per Chacteristic | 45.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 45.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT NS |
| Acquisition Status | ACTIVE |
| DEMIL Code | DEMIL Q — CCL Item — Commerce Control List |
| Hazard | No hazard code in the DLA record (HMIC N) |
| Criticality Code | Y |
| Part Number | Manufacturer |
|---|---|
| 85-49419-001 PRIMARY | Raytheon E-Systems, Inc (USA) |
| Reference | Meaning |
|---|---|
| MB81C78A-45CWSC | 5/9 Secondary reference Fujitsu Microelectronics, Inc. |
| NH85-49419-001 | 5/1 Secondary reference Dla Land and Maritime Dba Engineering and Technical Support Div Document Standardization Division (vendor Item Drawings) |
| P4C164-45CMB | 5/1 Secondary reference Performance Semiconductor Corp |
NSN 5962-01-313-0662 is a Microcircuit,memory, manufactured by Raytheon E-Systems, Inc, classified under FSC 5962, Microcircuits, Electronic. Status: active.
NSN 5962-01-313-0662 has 1 manufacturer part number on file: 85-49419-001 (Raytheon E-Systems, Inc).
1 possible match (shared part number, not a government interchangeability claim): 5962-01-371-2706. Verify interchangeability with system specifications before substitution.
Key specifications for 85-49419-001: Input Circuit Pattern: 25 INPUT; Inclosure Material: CERAMIC; Terminal Surface Treatment: SOLDER; Body Width: 0.245 INCHES MINIMUM AND 0.310 INCHES MAXIMUM IN. 19 specifications are documented in the U.S. Government catalog.
No hazard code in the DLA record (HMIC N). Hazard information on this page is shown exactly as it appears in the DLA record.
NSN 5962-01-313-0662 has DEMIL Code Q. Demilitarization may be required before disposal or transfer to non-military entities.
U.S. Government catalog: edition PUBLOGDVD v12.0.0 (OCT 2026), edition date 2026-10-01, retrieved 2026-10-16.
U.S. Government catalog: edition PUBLOGDVD v12.0.0 (OCT 2026), edition date 2026-10-01, retrieved 2026-10-18.