The Microcircuit,memory, cataloged under National Stock Number 5962-01-312-4685, is classified within Federal Supply Class 5962 (No Item Name Available) of the Electrical and Electronic Equipment Components group. The primary manufacturer of record is Raytheon E-Systems, Inc. Government technical data includes 20 verified specifications, sourced from the Federal Logistics Information System (FLIS). This item has 5 commercial cross-references from 4 manufacturers, enabling identification through both NSN and commercial part number lookups. 1 verified substitute exists in the FLIS interchangeability database. Current acquisition status: Active.
| Parameter | Value |
|---|---|
| NSN | 5962-01-312-4685 |
| Primary Part Number | 85-49421-001 |
| Item Name | Microcircuit,memory |
| FSC / FSG | 5962 / 59 — No Item Name Available |
| Manufacturer | Raytheon E-Systems, Inc |
| Status | ACTIVE |
| Input Circuit Pattern | 14 INPUT |
| Body Width | 0.500 INCHES MINIMUM AND 0.610 INCHES MAXIMUM IN |
| Body Length | 1.290 INCHES MAXIMUM IN |
| Inclosure Configuration | DUAL-IN-LINE |
| Time Rating Per Chacteristic | 45.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 45.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT NS |
| Test Data Document | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
| Memory Capacity | UNKNOWN |
| Terminal Surface Treatment | SOLDER |
| Terminal Type and Quantity | 24 PRINTED CIRCUIT |
| Memory Device Type | ROM |
| Case Outline Source and Designator | D-3 MIL-M-38510 |
| Criticality Code Justification | FEAT |
| Voltage Rating and Type Per Characteristic | 7.0 VOLTS MAXIMUM POWER SOURCE |
| Body Height | 0.150 INCHES MINIMUM AND 0.210 INCHES MAXIMUM IN |
| Inclosure Material | CERAMIC |
| Features Provided | ELECTROSTATIC SENSITIVE AND HERMETICALLY SEALED AND BURN IN AND PROGRAMMABLE |
| Operating Temp Range | -55.0 TO 125.0 CELSIUS DEGC |
| Output Logic Form | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
| Storage Temp Range | -65.0 TO 150.0 CELSIUS DEGC |
| Maximum Power Dissipation Rating | 660.0 MILLIWATTS |
| Acquisition Status | ACTIVE |
| HAZMAT | No |
| Part Number | Manufacturer |
|---|---|
| WS57C49B-45TMB | Waferscale Integration Inc (USA) |
| ROM/PROM | Dla Land and Maritime Dba Engineering and Technical Support Div Document Standardization Division (vendor Item Drawings) (USA) |
| NH85-49421-001 | Dla Land and Maritime Dba Engineering and Technical Support Div Document Standardization Division (vendor Item Drawings) (USA) |
| CY7C261-45DMB | Infineon Technologies Americas Corp. (USA) |
| 85-49421-001 PRIMARY | Raytheon E-Systems, Inc (USA) |
NSN 5962-01-312-4685 is a Microcircuit,memory, manufactured by Raytheon E-Systems, Inc, classified under FSC 5962 (No Item Name Available). Status: active.
NSN 5962-01-312-4685 has 5 cross-referenced part numbers: WS57C49B-45TMB (Waferscale Integration Inc), ROM/PROM (Dla Land and Maritime Dba Engineering and Technical Support Div Document Standardization Division (vendor Item Drawings)), NH85-49421-001 (Dla Land and Maritime Dba Engineering and Technical Support Div Document Standardization Division (vendor Item Drawings)), CY7C261-45DMB (Infineon Technologies Americas Corp.), 85-49421-001 (Raytheon E-Systems, Inc).
There is 1 known substitute for 5962-01-312-4685: 5962-01-371-4156. Verify interchangeability with system specifications before substitution.
Key specifications for 85-49421-001: Input Circuit Pattern: 14 INPUT; Body Width: 0.500 INCHES MINIMUM AND 0.610 INCHES MAXIMUM IN; Body Length: 1.290 INCHES MAXIMUM IN; Inclosure Configuration: DUAL-IN-LINE. 22 total characteristics are documented in the Federal Logistics Information System.