The Microcircuit,memory, cataloged under National Stock Number 5962-01-303-3558, is classified within Federal Supply Class 5962 (No Item Name Available) of the Electrical and Electronic Equipment Components group. The primary manufacturer of record is Raytheon Company Div Rmd Strategic. Government technical data includes 19 verified specifications, sourced from the Federal Logistics Information System (FLIS). This item has 3 commercial cross-references from 3 manufacturers, enabling identification through both NSN and commercial part number lookups. 4 verified substitutes exist in the FLIS interchangeability database. Current acquisition status: Active.
| Parameter | Value |
|---|---|
| NSN | 5962-01-303-3558 |
| Primary Part Number | 50002-2 |
| Item Name | Microcircuit,memory |
| FSC / FSG | 5962 / 59 — No Item Name Available |
| Manufacturer | Raytheon Company Div Rmd Strategic |
| Status | ACTIVE |
| Output Logic Form | N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC |
| Storage Temp Range | -65.0 TO 150.0 CELSIUS DEGC |
| Inclosure Configuration | DUAL-IN-LINE |
| Operating Temp Range | -55.0 TO 125.0 CELSIUS DEGC |
| Memory Device Type | ROM |
| Test Data Document | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
| Memory Capacity | UNKNOWN |
| Terminal Surface Treatment | SOLDER |
| Time Rating Per Chacteristic | 200.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 200.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT NS |
| Voltage Rating and Type Per Characteristic | 7.0 VOLTS MAXIMUM POWER SOURCE |
| Case Outline Source and Designator | D-10 MIL-M-38510 |
| Terminal Type and Quantity | 28 PRINTED CIRCUIT |
| Body Length | 1.490 INCHES MAXIMUM IN |
| Body Height | 0.172 INCHES MINIMUM AND 0.217 INCHES MAXIMUM IN |
| Body Width | 0.500 INCHES MINIMUM AND 0.610 INCHES MAXIMUM IN |
| Inclosure Material | CERAMIC |
| Features Provided | HERMETICALLY SEALED AND BURN IN AND ULTRAVIOLET ERASABLE AND W/ENABLE AND PROGRAMMABLE AND ELECTROSTATIC SENSITIVE |
| Input Circuit Pattern | 17 INPUT |
| Maximum Power Dissipation Rating | 1.0 WATTS |
| Acquisition Status | ACTIVE |
| HAZMAT | No |
| Part Number | Manufacturer |
|---|---|
| 8202503YA | Dla Land and Maritime Dba Engineering and Technical Support Div Document Standardization Division (standard Microcircuit (USA) |
| 50002-2 PRIMARY | Raytheon Company Div Rmd Strategic (USA) |
| ROM/PROM FAMILY 091 | Dla Land and Maritime Dba Engineering and Technical Support Div Document Standardization Division (vendor Item Drawings) (USA) |
NSN 5962-01-303-3558 is a Microcircuit,memory, manufactured by Raytheon Company Div Rmd Strategic, classified under FSC 5962 (No Item Name Available). Status: active.
NSN 5962-01-303-3558 has 3 cross-referenced part numbers: 8202503YA (Dla Land and Maritime Dba Engineering and Technical Support Div Document Standardization Division (standard Microcircuit), 50002-2 (Raytheon Company Div Rmd Strategic), ROM/PROM FAMILY 091 (Dla Land and Maritime Dba Engineering and Technical Support Div Document Standardization Division (vendor Item Drawings)).
There are 4 known substitutes for 5962-01-303-3558: 3010-00-652-2414, 5962-01-077-6120, 5315-01-191-7890 and 1 more. Verify interchangeability with system specifications before substitution.
Key specifications for 50002-2: Output Logic Form: N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC; Storage Temp Range: -65.0 TO 150.0 CELSIUS DEGC; Inclosure Configuration: DUAL-IN-LINE; Operating Temp Range: -55.0 TO 125.0 CELSIUS DEGC. 19 total characteristics are documented in the Federal Logistics Information System.