The Microcircuit,memory, cataloged under National Stock Number 5962-01-294-4766, is classified within Federal Supply Class 5962 (No Item Name Available) of the Electrical and Electronic Equipment Components group. The primary manufacturer of record is Raytheon Company Div Rmd Strategic. Government technical data includes 16 verified specifications, sourced from the Federal Logistics Information System (FLIS). This item has 5 commercial cross-references from 3 manufacturers, enabling identification through both NSN and commercial part number lookups. 12 verified substitutes exist in the FLIS interchangeability database. Current acquisition status: Active.
| Parameter | Value |
|---|---|
| NSN | 5962-01-294-4766 |
| Primary Part Number | 49518-1 |
| Item Name | Microcircuit,memory |
| FSC / FSG | 5962 / 59 — No Item Name Available |
| Manufacturer | Raytheon Company Div Rmd Strategic |
| Status | ACTIVE |
| Body Height | 0.144 INCHES MINIMUM AND 0.176 INCHES MAXIMUM IN |
| Body Width | 0.263 INCHES MINIMUM AND 0.307 INCHES MAXIMUM IN |
| Test Data Document | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
| Input Circuit Pattern | 14 INPUT |
| Operating Temp Range | -55.0 TO 125.0 CELSIUS DEGC |
| Terminal Surface Treatment | SOLDER |
| Memory Device Type | PAL |
| Terminal Type and Quantity | 20 PRINTED CIRCUIT |
| Body Length | 0.938 INCHES MINIMUM AND 0.998 INCHES MAXIMUM IN |
| Time Rating Per Chacteristic | 45.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 45.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT NS |
| Inclosure Material | CERAMIC |
| Inclosure Configuration | DUAL-IN-LINE |
| Storage Temp Range | -65.0 TO 150.0 CELSIUS DEGC |
| Features Provided | HERMETICALLY SEALED AND BURN IN AND PROGRAMMABLE AND HIGH SPEED AND SCHOTTKY |
| Voltage Rating and Type Per Characteristic | 7.0 VOLTS MAXIMUM POWER SOURCE |
| Output Logic Form | TRANSISTOR-TRANSISTOR LOGIC |
| Acquisition Status | ACTIVE |
| HAZMAT | No |
| Part Number | Manufacturer |
|---|---|
| 725900-50 | Raytheon Company Div Rmd Strategic (USA) |
| ROM/PROM FAMILY 059 | Dla Land and Maritime Dba Engineering and Technical Support Div Document Standardization Division (vendor Item Drawings) (USA) |
| 49518-1 PRIMARY | Raytheon Company Div Rmd Strategic (USA) |
| 725900-1 | Raytheon Company Div Rmd Strategic (USA) |
| PAL16R4AMJ883B | Mmi/amd (USA) |
NSN 5962-01-294-4766 is a Microcircuit,memory, manufactured by Raytheon Company Div Rmd Strategic, classified under FSC 5962 (No Item Name Available). Status: active.
NSN 5962-01-294-4766 has 5 cross-referenced part numbers: 725900-50 (Raytheon Company Div Rmd Strategic), ROM/PROM FAMILY 059 (Dla Land and Maritime Dba Engineering and Technical Support Div Document Standardization Division (vendor Item Drawings)), 49518-1 (Raytheon Company Div Rmd Strategic), 725900-1 (Raytheon Company Div Rmd Strategic), PAL16R4AMJ883B (Mmi/amd).
There are 12 known substitutes for 5962-01-294-4766: 5962-01-177-9187, 2910-01-197-7869, 5962-01-197-8702 and 9 more. Verify interchangeability with system specifications before substitution.
Key specifications for 49518-1: Body Height: 0.144 INCHES MINIMUM AND 0.176 INCHES MAXIMUM IN; Body Width: 0.263 INCHES MINIMUM AND 0.307 INCHES MAXIMUM IN; Test Data Document: 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.).; Input Circuit Pattern: 14 INPUT. 16 total characteristics are documented in the Federal Logistics Information System.