The Microcircuit,memory, cataloged under National Stock Number 5962-01-269-1174, is classified within Federal Supply Class 5962 (No Item Name Available) of the Electrical and Electronic Equipment Components group. The primary manufacturer of record is Raytheon Company Div Rmd Strategic. Government technical data includes 20 verified specifications, sourced from the Federal Logistics Information System (FLIS). This item has 5 commercial cross-references from 2 manufacturers, enabling identification through both NSN and commercial part number lookups. 6 verified substitutes exist in the FLIS interchangeability database. Current acquisition status: Active.
| Parameter | Value |
|---|---|
| NSN | 5962-01-269-1174 |
| Primary Part Number | 50330-1 |
| Item Name | Microcircuit,memory |
| FSC / FSG | 5962 / 59 — No Item Name Available |
| Manufacturer | Raytheon Company Div Rmd Strategic |
| Status | ACTIVE |
| Features Provided | ELECTROSTATIC SENSITIVE AND ULTRAVIOLET ERASABLE AND PROGRAMMABLE AND W/ENABLE |
| Terminal Type and Quantity | 28 PRINTED CIRCUIT |
| Time Rating Per Chacteristic | 250.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 250.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT NS |
| Test Data Document | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
| Operating Temp Range | +0.0 TO 70.0 CELSIUS DEGC |
| Body Width | 0.515 INCHES MINIMUM AND 0.600 INCHES MAXIMUM IN |
| Input Circuit Pattern | 16 INPUT |
| Inclosure Configuration | DUAL-IN-LINE |
| Output Logic Form | N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC |
| Voltage Rating and Type Per Characteristic | -0.6 VOLTS MINIMUM POWER SOURCE AND 14.0 VOLTS MAXIMUM POWER SOURCE |
| Terminal Surface Treatment | SOLDER |
| Storage Temp Range | -65.0 TO 150.0 CELSIUS DEGC |
| Inclosure Material | CERAMIC |
| Word Quantity | 8192 |
| Body Height | 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM IN |
| Body Length | 1.435 INCHES MINIMUM AND 1.485 INCHES MAXIMUM IN |
| Bit Quantity | 65536 |
| Precious Material | GOLD |
| Memory Device Type | ROM |
| Precious Material and Location | TERMINAL SURFACES OPTION GOLD |
| Acquisition Status | ACTIVE |
| HAZMAT | No |
| Part Number | Manufacturer |
|---|---|
| 722942-52 | Raytheon Company Div Rmd Strategic (USA) |
| ROM/PROM | Dla Land and Maritime Dba Engineering and Technical Support Div Document Standardization Division (vendor Item Drawings) (USA) |
| 722942-27 | Raytheon Company Div Rmd Strategic (USA) |
| 722942-8 | Raytheon Company Div Rmd Strategic (USA) |
| 50330-1 PRIMARY | Raytheon Company Div Rmd Strategic (USA) |
NSN 5962-01-269-1174 is a Microcircuit,memory, manufactured by Raytheon Company Div Rmd Strategic, classified under FSC 5962 (No Item Name Available). Status: active.
NSN 5962-01-269-1174 has 5 cross-referenced part numbers: 722942-52 (Raytheon Company Div Rmd Strategic), ROM/PROM (Dla Land and Maritime Dba Engineering and Technical Support Div Document Standardization Division (vendor Item Drawings)), 722942-27 (Raytheon Company Div Rmd Strategic), 722942-8 (Raytheon Company Div Rmd Strategic), 50330-1 (Raytheon Company Div Rmd Strategic).
There are 6 known substitutes for 5962-01-269-1174: 5310-00-050-3301, 5950-00-857-3252, 5962-01-256-4219 and 3 more. Verify interchangeability with system specifications before substitution.
Key specifications for 50330-1: Features Provided: ELECTROSTATIC SENSITIVE AND ULTRAVIOLET ERASABLE AND PROGRAMMABLE AND W/ENABLE; Terminal Type and Quantity: 28 PRINTED CIRCUIT; Time Rating Per Chacteristic: 250.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 250.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT NS; Test Data Document: 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.).. 20 total characteristics are documented in the Federal Logistics Information System.